DESCRIPTIONS
The MB85R2001 is an FRAM (Ferroelectric Random Access Memory) chip consisting of 262,144 words × 8 bits of non-volatile memory cells created using ferroelectric process and silicon gate CMOS process technologies.
The MB85R2001 is able to retain data without using a back-up battery, as is needed for SRAM.
The memory cells used in the MB85R2001 can be used for at least 1010 read/write operations, which is a significant improvement over the number of read and write operations supported by Flash memory and E2PROM.
The MB85R2001 uses a pseudo-SRAM interface that is compatible with conventional asynchronous SRAM.

FEATURES
* Bit configuration : 262,144 words × 8 bits
* Read/write endurance : 1010 times/bit (Min)
* Operating power supply voltage : 3.0 V to 3.6 V
* Operating temperature range : − 20 °C to + 85 °C
* Data retention : 10 years ( + 55 °C)
* Package : 48-pin plastic TSOP (1)

MB85R2001PFTN-GE1
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