DESCRIPTION
 International Rectifier’s R5TM technology provides high performance power MOSFETs for space applications.
These devices have been characterized for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)).
The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

FEATURE
* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Simple Drive Requirements
* Ease of Paralleling
* Hermetically Sealed
* Surface Mount
* Ceramic Package
* Light Weight

IRHNM597110
IRHNM593110

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