* Matched Pair of Transistors for Optimum Balanced Amplifier Design
* AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
* High Gain:
   25 dB @ 900 MHz
   21 dB @ 1900 MHz
* Low Noise Figure:
   0.6 dB @ 900 MHz
   0.7 dB @ 1900 MHz
* 17 dBm P1dB at 2 GHz
* 33 dBm OIP3 at 2 GHz
* 600μm Gate Width: 50 Output Impedance
* Excellent Uniformity
* Ultra Compact Surface-Mount QFN Package
* 10 Year MTBF Lifetime
* RoHS-Compliant Construction

* Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
* Cellular/PCS/GSM/W-CDMA
* Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
* WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
* General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm
QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz

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