The AWT6275 meets the increasing demands for higher output power in UMTS handsets. The PA module is optimized for VREF = +2.85 V, a requirement for compatibility with the Qualcomm® 6250 chipset. The device is manufactured on an advanced InGaP HBT MMIC technology offering state-of-the-art reliability, temperature stability, and ruggedness. Selectable bias modes that optimize efficiency for different output power levels, and a shutdown mode with low leakage current, increase handset talk and standby time. The self-contained 4 mm x 4 mm x 1.5 mm surface mount package incorporates matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.

*InGaP HBT Technology
*High Efficiency:
-43% @ POUT = +27.5 dBm
-21% @ POUT = +16 dBm
-15% @ POUT = +7 dBm
*Low Quiescent Current: 16 mA
*Low Leakage Current in Shutdown Mode: <1 μA
*VREF = +2.85 V (+2.75 V min over temp)
*Optimized for a 50 Ω System
*Low Profile Miniature Surface Mount Package Option: 1.1 mm Max
*RoHS Compliant Package, 250 oC MSL-3
*HSDPA Capable

*Dual Band WCDMA Wireless Handsets
*Dual Mode 3GPP Wireless Handsets


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