New products boost vibration resistance by 50 percent^*2

Tokyo -- Toshiba Corporation today announced the latest additions to its market-leading lineup of 2.5-inch hard disk drives (HDD) for automotive applications: an 80GB drive offering the industry's largest^*1capacity, and a 40GB drive. The drives will be used in such applications as car navigation systems, and will be released in industrial and retail versions. Sample shipping of the drives has started and mass production will start in March 2008.

Toshiba's automotive HDD have earned an unrivaled reputation for environmental toughness and performance, and made the company the leader in the world automotive HDD market. With its latest drives, the company has further enhanced durability and increased data capacity, using perpendicular magnetic recording (PMR) to boost areal recording density and to raise storage capacity to 80GB (MK8050GAC and MK8050GACE), double that of Toshiba's current automotive drives^*2 .

Alongside higher storage, the drives offer numerous enhancements. Lighter moving parts, a highly rigid enclosure, and the vibration resistance achieved by a highly accurate head positioning system, takes overall, vibration resistance to 29.4m/s² (5-50Hz), a full 50% improvement over current automotive models^*2. In addition, an advanced aerodynamic design for the head slider, which “floats" the head on a cushion of air, maintains the flying head at a constant distance from the disk, a refinement that brings greater reliability to data read and write in low pressure conditions at high altitude. As a result, the new drives can operate at up to 5,500m above sea level, 1,200m higher than current automotive models^*2.

In addition to map data information for car navigation, the new HDD can be used in on-board entertainment systems, to store high capacity movie, digital image and music files.

Toshiba introduced its first HDD for automotive application in 2001. The company's highly durable and reliable products today command a share of approximately 85% of the global automotive HDD market^*3, and cumulative shipments now stand at over 7-million units.

The new drives are fully compliant with the EU RoHS directive.

Outline of New Models

Note:

Hard disk capacity is calculated on the basis of 1MB = 1-million bytes, and 1GB = 1-billion bytes.

Background

The integration of HDD with fast access speeds into car navigation systems is increasing, especially in Japan, due to usability; fast screen refresh and the ability to store such data as music and visual content. The same trend is now being seen overseas, including Europe, and HDD-based car navigation is expected to see global demand growth. Recently, alongside map data, the need to store entertainment data for the enjoyment of rear seat passengers is increasing, stimulating demand for higher capacity HDD.

In this situation, Toshiba is meeting market needs with the industry's largest^*180GB HDD for automotive application.

Key Features of New Products

1. PMR increases storage capacity and high level environmental durability
	Adoption of PMR achieves high-density recording at increased areal density. This allows the 80GB MK 8050GAC and MK8050GACE to offer twice the capacity of current automotive HDD models*2. PMR also improves environmental durability in respect of vibration, and low air pressure.
2. High vibration resistance
	HDD used in automobiles needs two to three times the vibration resistance of HDD in PC. Toshiba has reduced the weight of moving parts and increased the rigidity of the enclosure, and added a new head positioning technology with an acceleration sensor that predicts vibration the HDD will experience and compensates the head position in real time. As a result, the new HDD have a vibration resistance of 29.4m/s2 (5-50Hz), a full 50% improvement over Toshiba's current automotive drives*2. Data stability is now assured even under vibration conditions that would normally cause read or write error.
3. High altitude operation
	The magnetic head of an HDD floats approximately 1/100,000mm above the fast rotating disk. Large change in air pressure will affect the head flying stability in HDD operation. By adopting the latest aerodynamic design technology to head slider design, the new drives can read and write data even in low pressure conditions at high altitude level. They can operate at up to 5,500m above sea level which is 1,200m higher than current automotive models*2.
	*1	The industry’s largest commercially available capacity in a 2.5-inch hard disk drive for automotive application, as of November 28, 2007 (source: Toshiba)
	*2	Comparison based on Toshiba’s current 2.5-inch HDD (MK4036GAC).
	*3	January, 2007 to September, 2007 (source: Techno Systems Research)

Main Specifications

World's First Operational Semiconductor-Based Weather Radar Goes into Operation at Nagoya University

TOKYO -- Toshiba Corporation today announced that it has developed and delivered the world's first operational weather radar system that replaces electron tubes in the transmitter with a high-power semiconductor module. The new radar is only one sixth the size of conventional equipment but offers comparable output power, along with improved waveband efficiency and enhanced features. The first unit of the new system has been installed at the Hydrospheric Atmospheric Research Center at Nagoya University, Japan. The Nagoya radar operates in the 9GHz frequency band (X-band) and is the first solid-state weather radar to go into practical operation.

While the new weather radar is much more compact and offers much higher performance than conventional systems, it maintains the same level of output power by adopting a combination of gallium nitride (GaN) power field effect transistors (FET) and pulse compression technology, which strengthens peak output power. Implementation of fully digital data processing suppresses the spurious level, allowing the frequency separation required for interference suppression to be shortened to one fourth. This contributes to efficient use of crowded radio frequencies.

The new radar reinforces performance by adding innovative features: dual polarization observation enhances the precision of rainfall estimation by capturing the shape and size of raindrops and cloud; clear-air turbulence observation detects very low levels of signal scattering, enabling to observe air conditions including wind speed even in clear weather -- a very difficult task for most weather radars.

The new system has a modular structure for the antenna, transmitter and received signal processor, which supports more flexible physical system layout depending on the installation site and operation. As the new radar does not use electron tubes, which have to be periodically replaced and disposed of, it reduces environmental loads, meeting Toshiba's goal of maximizing the eco-efficiency of its products and systems.

Because of the limitation of bandwidth availability with increasing use of radio wave frequency resources, steady demand for solid-state radars is expected, as they can contribute to more efficient use of frequencies. Toshiba will market the new high-power semiconductor-based weather radar in both 9GHz band (X-band) and 5GHz band (C-band) versions, both in Japan and overseas, including sales of individual modules that build the system.

Product Outline

World's first perpendicular magnetic anisotropy MTJ device

Tokyo--Toshiba Corporation today announced important breakthroughs in key technologies for magnetoresistive random access memory (MRAM), a promising, next-generation semiconductor memory device. The company has successfully fabricated a MRAM memory cell integrating the new technologies and verified its stable performance. Full details of the new technologies were presented today at the 52^nd Magnetism and Magnetic Materials Conference in Tampa, Florida, USA which is being held from November 5^th to 9^th.

MRAM is a highly anticipated next-generation non-volatile semiconductor memory device that offers fast random write/access speeds, enhances endurance in operation with very low power consumption. MRAM can theoretically achieve high level integration as the memory cell structure is relatively simple.
In making these major advances, Toshiba applied and proved the spin transfer switching and perpendicular magnetic anisotropy (PMA) technologies in a magnetic tunnel junction, which is a key component in the memory cell.

Spin transfer switching uses the properties of electron spin to invert magnetization and writes data at very low power levels. It is widely regarded as a major candidate among next-generation principles for new memory devices. PMA aligns magnetization in the magnetic layer perpendicularly, either upward or downward, rather than horizontally as in in-plane shape anisotropy layers. The technology is being increasingly used to enhance for storage capacity for high-density hard disc drives (HDDs), and Toshiba has successfully applied it to a semiconductor memory device. With PMA data write operation and magnetic switching can be achieved at a low energy level. Toshiba also overcame the hurdle of achieving the required precision in the interface process and significantly cutting write power consumption.

In order to realize a miniature memory cell based on PMA, Toshiba optimized the materials and device structure of the new MRAM. Close observation of performance confirms stable operation (see the diagram for full explanation of structure).

Toshiba will further enhance development toward establishing fundamental technologies within the coming years.

Development of the new MRAM technologies was partly supported by grants from Japan's New Energy and Industrial Technology Development Organization (NEDO).

Outline of Development

(1) Cell Structure

A material with perpendicular magnetic anisotropy, which is used for recording media and a type of cobalt-iron, is employed in the magnetic layer, with magnesium oxide in the insulating layer and cobalt-iron-boron in the interface layers.

(2) Operational Results

Figure 1
	Resistance versus voltage pulses: Shows device resistance characteristics after voltage pulses are applied to perform write operation. The switching between high and low resistive states is clearly seen at the voltage threshold in both the positive and negative directions.
Figure 2
	Resistance versus DC magnetic field: Device resistance characteristics when the magnetic field is applied perpendicular to layers. The high and low resistive states are clearly observed, and are produced by the magnetization direction in the free layer with reference to the reference layer.

(3) Major characteristics and specifications of MRAM device

Achievement of 65.4W Output Power at 14.5GHz

TOKYO--Toshiba Corporation today announced that it has developed a gallium nitride (GaN) power field effect transistor (FET) for the Ku-band (12GHz to 18GHz) frequency range that achieves an output power of 65.4W at 14.5GHz, the highest level of performance yet reported at this frequency band. The main application of the new transistor will be in base stations for satellite microwave communications, which carry high-capacity signals, including high-definition broadcasts. Toshiba plans to start sample shipment of the new power FET by the end of 2007 and to go into mass production by the end of March 2008.

Advances in Ku-band microwave amplifiers focus on replacing the electron tubes conventionally used at this bandwidth with semiconductors, particularly GaN devices, which offer advantageous high power characteristics at higher microwave frequencies.

The new power FET has a high electron mobility transistor (HEMT) structure that Toshiba has optimized for the Ku-band. The company replaced source wire bonding with via hole technology^*1 to reduce parasitic inductance, and also improved overall design of the matching circuit for practical application at Ku-band frequencies.

Demand for GaN power FET for radars and satellite microwave communications base stations is growing steadily, both for new equipment and replacement of electron tubes. Toshiba will meet this demand with early commercialization of its new Ku-band power FET.

Full details of the new GaN power FET will be presented at the European Microwave Conference 2007, in Munich, Germany from October 8 to 12.

Background and development aims

Ever increasing communications flows in satellite microwave communications are driving demand for higher output power in signal amplifying devices, as is development of more powerful radar systems. Demand is particularly strong for GaN devices, which offer advantages over conventional gallium arsenide devices in heat dissipation and high power performance characteristics at high frequency.

Toshiba has taken the lead in applying GaN technology to power FET for microwave frequency applications. The company directed its initial efforts to the development and marketing of power FET for the 6GHz band (2005) and 9.5GHz (2006) band, and developed devices that achieved the worlds highest output power at those frequencies. The company has now extended its line-up to 14.5GHz. Toshiba will continue development for the18GHz to 30GHz frequencies (Ka-band) and beyond.

Outline of development

1. Device technology
Toshiba achieved the outstanding performance of the new FET by optimizing the composition and thickness of the AlGaN and GaN layers formed on the highly heat-conductive silicon carbide (SiC) substrate of the HEMT structure. To assure high performance at Ku-band frequencies, Toshiba has applied a shorter gate length of below 0.3 microns, and optimized the shape of each electrode and element configuration to enhance heat dissipation.

2. Process technology
To reduce the parasitic inductance and improve higher frequency performance, Toshiba developed a unique technology for forming via holes, which pass from the surface source electrode through the chip to the ground. Success in forming via holes in SiC substrate, recognized as a highly demanding process, is a breakthrough in development of the new FET.

As gate lengths shorten, suppression of current leakage at the gate electrode is essential for achieving high level performance. A unique overcoat process applied around each gate electrode contributes to suppressing gate leakage to 1/30 that of Toshiba's conventional approaches. Electron beam exposure technology is applied in order to secure stable processing of gate lengths below 0.3 micron meters.

Key characteristics

Starting mass production of world's first CSCM
ultra small camera module applying TCV technology

TOKYO--Toshiba Corporation today announced that it will reinforce its competitiveness in the CMOS image sensor business by bringing in-house the currently outsourced production of CMOS camera modules. Mass production of new products will start at Iwate Toshiba Electronics, a Toshiba Group company, from January 2008. Manufacturing will start with the latest addition to Toshiba's Dynastron™ ^*1 series of CMOS image sensors, an ultra small CSCM (chip scale camera module) that will be the first camera module manufactured with TCV (Through Chip Via) technology. The modules will be demonstrated at CEATEC JAPAN 2007 from October 2^nd, at Makuhari Messe, at Toshiba's booth, at 8C12.

As mobile consumer products with cameras, particularly mobile phones, become increasingly compact, demand is growing for ultra small CMOS camera modules with high image quality.

"In order to meet demand, we will refine our business model by bringing our manufacturing of CMOS camera modules into the Group," said Yoshio Ooida, the executive vice president of Toshiba's Semiconductor Company. "We plan to gradually increase the in-house manufacturing ratio of CSCM products. Integrating manufacturing of image sensors at Oita Operations with camera module at Iwate Toshiba Electronics will allow us to reinforce cost-competitiveness in CMOS image sensor business and to put in place optimized supply chain management. We will also further develop the business by increasing sensor manufacturing capacity at Oita Operations."

The new CSCM micro-camera modules will be the first produced with TCV technology, which reduces wire bonding a substrate area by mounting components directly on the wafer and running electrodes through the vias on the circuit board, securing them with balls of solders on the substrate. The new product also reduces pixel size, contributing to a module size up to 64%^*2 smaller than camera modules manufactured with the same sensors.

The application of balls of solder and heat resistant lenses that are not affected by reflow^*3 significantly reduces the process for camera mounting to the circuit boards of mobile consumer products manufacturers.

*1	Dynastron is a trademark of Toshiba Corporation
*2	Compared with a camera module manufactured with a same image sensor.
*3	Reflow means to attach a surface mounted component to a circuit board, and reflowing the solder in a conveyorized oven.

Image of CMOS camera modules

Outline of products

Specifications

The FPF218x and FPF219x Series of IntelliMAX™ Load Switches in 1mm x 1.5mm WL-CSP Packaging Offer 60 Percent Space Savings

San Jose, California – December 11, 2007 – Fairchild Semiconductor’s (NYSE: FCS) FPF218x and FPF219x series of advanced load switches provide 60 percent space savings, making them ideal for space-constrained portable applications. Packaged in a 1mm x 1.5mm wafer-level chip scale package (WL-CSP), these are the smallest load switches of their class, and retain the same low R_DS(ON) performance found in standard leaded-package devices.

These two series of IntelliMAX products offer integrated protection circuitry, including over-current protection, current blanking, reverse-current blocking, over temperature and thermal shutdown protection. Included in this series is a new feature called “Power Good,” which provides a logic source sense signal, and can be used to validate the presence of the power supply on the load switch’s input pin. All of these built-in features provide robust protection from the harshest of mobile environments.

The FPF218x and FPF219x series utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price (each, 1000 pcs): FPF218x series = $0.78; FPF219x series = $0.84

Availability: Samples available now

Delivery: 12-14 weeks

Contact Information:
To contact Fairchild Semiconductor about this product, please go to: http://www.fairchildsemi.com/cf/sales_contacts/

For information on other products, design tools and sales contacts, please visit: http://www.fairchildsemi.com/.

Note to Editor: For datasheets in PDF format, please go to:
www.fairchildsemi.com/ds/FP/FPF2180.pdf
www.fairchildsemi.com/ds/FP/FPF2193.pdf

San Jose, California – December 6, 2007 – Fairchild Semiconductor’s (NYSE: FCS) FAN5645, a single wire programmable LED driver, offers a flexible and compact solution for blinking LED indicators. This device records a blinking pattern and plays it indefinitely, eliminating the need for continual system processor control. This results in significant energy savings and longer battery life since the FAN5645 consumes much less current (33µA Typ.) when compared to a system processor’s consumption in the mA range. The autonomous operation of the FAN5645 LED driver eliminates the need for an interrupt driven processor to control the sequencing of the LED, freeing up processor bandwidth. Packaged in a compact MLP 3.0mm x 3.0mm package, the FAN5645 is ideal for space-constrained portable and battery-operated applications such as cell phones, toys, home appliances, mobile computing, Bluetooth peripherals, rechargeable flashlights, motion sensors and power tools.

The FAN5645 utilizes lead-free (Pb-free) terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price (each, 1000 pcs): $0.65

Availability: Samples available now

Delivery: 8-10 weeks ARO

Contact Information: To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

Note to Editor: For a datasheet in PDF format, please go to: www.fairchildsemi.com/ds/FA/FAN5645.pdf

For information on other products, design tools and sales contacts, please visit: http://www.fairchildsemi.com/.

San Jose, California − December 4, 2007 − Fairchild Semiconductor’s (NYSE: FCS) FDMF8704 and FDMF8704V optimize efficiency across high, medium and light loads in ultra-dense servers, blade servers, advanced gaming systems, small form factor desktops, media center PCs, graphic cards, networking and telecom equipment, and other DC-DC applications. Most computing applications do not run at 100 percent load all the time and delivering the right performance at the right current levels reduces power losses for these applications. Average power losses across the full operating range are reduced by 14 percent compared to conventional discrete solutions by using Fairchild’s driver plus FET multi-chip modules, and these systems can more easily meet the demand for higher efficiency mandated by energy regulatory programs such as Energy Star.

The FDMF8704 and FDMF8704V are FET plus driver power stage solutions that integrate one driver IC, three power MOSFETs and one Schottky diode into an 8mm x 8mm MLP package, conserving valuable PCB real estate. The FDMF8704 is capable of operating at 1MHz eliminating passive components to further reduce board space and lower BOM costs. Compared to conventional discrete solutions, Fairchild’s DrMOS saves more than 72 percent of valuable board space.

The FDMF8704 and the FDMF8704V are both based on the Intel® specification for DrMOS. The FDMF8704 maximizes efficiency through a low-impedance driver IC and Fairchild’s latest PowerTrench® MOSFET technology. The FDMF8704 is ideal for applications such as servers that need to maximize efficiency. The FDMF8704V features a convenient built-in voltage regulator block for applications with only a 12V rail available.

“Fairchild is an industry leader in DrMOS solutions. Our extensive DrMOS portfolio provides designers with the flexibility to choose the right performance, at the right price, for the right application,” says Roberto Guerrero, worldwide segment manager for Desktop, Server and Gaming products.

The FDMF8704 and FDMF8704V utilize lead-free (Pb-free) terminals and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price (each, 1000 pcs):	FDMF8704 US $3.00
FDMF8704V US $3.00

Availability: Samples available now

Delivery: 12 weeks ARO

Contact Information:
To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

For information on other products, design tools and sales contacts, please visit: www.fairchildsemi.com.

Note to Editor: For a datasheet in PDF format, please go to:
www.fairchildsemi.com/ds/FD/FDMF8704.pdf
www.fairchildsemi.com/ds/FD/FDMF8704V.pdf

San Jose, California – November 27, 2007 – Fairchild Semiconductor’s (NYSE: FCS) FAN31xx and FAN32xx high-speed low-side gate drivers offer maximum flexibility for power supply designs, providing a wide selection of features and packaging to create compact, highly efficient and reliable power supplies. Available in either the industry’s smallest MLP packaging or industry-standard SOT and SOIC packaging, this broad portfolio of gate drivers expands the options available in the market today. With the additional flexibility offered by input-threshold and package choices, two inputs per channel, plus a higher voltage range, short propagation delays, and delay matching between channels, power-supply designs can be further optimized in terms of efficiency, reliability, power density and cost.

Advantages of the FAN31xx/32xx Series:

• Industry’s smallest packages (2x2 and 3x3 mm MLP)
• Choice of TTL or CMOS input thresholds for all devices for best circuit compatibility
• Short and well-controlled time delays for 1MHz+ switching, paralleling drives, and optimizing drive timing to maximize efficiency.
• Rugged and high reliability operation with higher maximum operating voltage of 18V, reverse current capability of at least 500mA and HBM ESD rating of 4kV or higher.

The series of high-speed low-side gate drivers consist of the FAN3100 single 2A gate drivers, and the FAN32xx family of dual 2A and 4A gate drivers. These products are specialized amplifiers that drive the gate of a switching power MOSFET or IGBT to quickly turn it on or off according to the input signal.  The dual drivers feature matched internal propagation delays between the two channels for applications such as synchronous rectifiers with critical timing needs. This matched internal propagation delay also enables a designer to connect the two channels in parallel, doubling the current capability for driving a single MOSFET.

These additions to our gate driver portfolio are part of a comprehensive suite of power solutions from Fairchild Semiconductor for high-efficiency, low-standby power AC-DC switch-mode power supplies and high-performance isolated DC-DC power converters.

The entire family of 32 new parts is covered by the following three datasheets:

  Single 2A:  www.fairchildsemi.com/ds/FA%2FFAN3100T.pdf
  Dual 2A:   www.fairchildsemi.com/ds/FA/FAN3228C.pdf
  Dual 4A:  www.fairchildsemi.com/ds/FA/FAN3224C.pdf

These low-side gate drivers utilize a lead-free (Pb-free) finish and have been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price: The pricing starts at $0.49 for quantities of 1,000.

Availability: All currently available parts are listed at http://www.fairchildsemi.com/sitesearch/fsc.jsp?command=eq&attr1=AAAFamily&attr2=Low-Side+Driversand where samples may also be ordered.

Delivery: 8 weeks ARO

Contact Information:
To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

For information on other products, design tools and sales contacts, please visit: www.fairchildsemi.com.

Note to Editor: For a datasheet in PDF format, please go to:
www.fairchildsemi.com/ds/FA/FAN3100T.pdf
www.fairchildsemi.com/ds/FA/FAN3228C.pdf
www.fairchildsemi.com/ds/FA/FAN3224C.pdf

San Jose, California – November 20, 2007 – Fairchild Semiconductor (NYSE: FCS) brings automotive control system designers more reliable solenoid control operation using less board space with the FDMS2380, a new Dual Integrated Solenoid Driver (DISD) solution. The FDMS2380 is an intelligent, dual independent channel, low-side driver with built-in recirculation and demagnetization circuits designed specifically for driving inductive loads. Other integrated features include over-voltage, over-current and over-temperature circuits to protect the device as well as a diagnostics feedback pin. The FDMS2380 is packaged in a space-saving 8mm x 12mm PQFN package.

Using a multi-die approach, Fairchild’s FDMS2380 integrates multiple control and power semiconductor die into a single, space-efficient package, delivering a highly reliable and compact design solution that is optimized for automotive and industrial solenoid applications. 

Key Features of the FDMS2380:

• Independent dual channels in PQFN packaging provides greater functionality in less board space than competing single channel and discrete solutions.
• Diagnostic signal provides enhanced fault handling and protection.
• Built-in over-current, over-voltage, over-temperature diagnostics prevent device failure.
• Extended operating voltage handles the automotive power bus without additional protection.

Fairchild’s unique capabilities in advanced process and packaging technologies, as well as its ability to integrate power analog, power discrete and optoelectronic functionality into innovative packaging, enable Fairchild to develop energy efficient solutions for the automotive electronics market. Fairchild offers the industry’s most comprehensive portfolio of products, from 1W to >1200W, to maximize energy efficiency in today’s automotive electronic applications such as power management, body control, motor control, ignition and engine management, and electric and hybrid electric vehicle systems.

The FDMS2380 utilizes lead-free (Pb-free) terminals and has been characterized for moisture sensitivity in accordance with the Pb-free reflow requirements of the joint IPC/JEDEC standard J-STD-020. All of Fairchild's products are designed to meet the requirements of the European Union's Directive on the restriction of the use of certain substances (RoHS).

Price (each, 1000pcs): $7.00

Availability: Samples available now

Delivery: 8-10 weeks

Contact Information:

To contact Fairchild Semiconductor about this product, please go to: www.fairchildsemi.com/cf/sales_contacts/.

For information on other products, design tools and sales contacts, please visit: http://www.fairchildsemi.com/.

Note to Editor: For a datasheet in PDF format, please go to: www.fairchildsemi.com/ds/FD/FDMS2380.pdf