GENERAL DESCRIPTION
The W25X10 (1M-bit), W25X20 (2M-bit), W25X40 (4M-bit) and W25X80 (8M-bit) Serial Flash memories provide a storage solution for systems with limited space, pins and power. The 25X series offers flexibility and performance well beyond ordinary Serial Flash devices. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 5mA active and 1μA for power-down. All devices are offered in space-saving packages.
The W25X10/20/40/80 array is organized into 512/1024/2048/4096 programmable pages of 256-bytes each. Up to 256 bytes can be programmed at a time using the Page Program instruction. Pages can be erased in groups of 16 (sector erase), groups of 256 (block erase) or the entire chip (chip erase). The W25X10/20/40/80 has 32/64/128/256 erasable sectors and 2/4/8/16 erasable blocks respectively. The small 4KB sectors allow for greater flexibility in applications that require data and parameter storage. (See figure 2.)
The W25X10/20/40/80 supports the standard Serial Peripheral Interface (SPI), and a high performance dual output SPI using four pins: Serial Clock, Chip Select, Serial Data I/O and Serial Data Out. SPI clock frequencies of up to 75MHz are supported allowing equivalent clock rates of 150MHz when using the Fast Read Dual Output instruction. These transfer rates are comparable to those of 8 and 16-bit Parallel Flash memories.
A Hold pin, Write Protect pin and programmable write protect, with top or bottom array control features, provide further control flexibility. Additionally, the device supports JEDEC standard manufacturer and device identification.

FEATURES
*Family of Serial Flash Memories
- W25X10: 1M-bit / 128K-byte (131,072)
- W25X20: 2M-bit / 256K-byte (262,144)
- W25X40: 4M-bit / 512K-byte (524,288)
- W25X80: 8M-bit / 1M-byte (1,048,576)
- 256-bytes per programmable page
- Uniform 4K-byte Sectors / 64K-byte Blocks
*SPI with Single or Dual Outputs
- Clock, Chip Select, Data I/O, Data Out
- Optional Hold function for SPI flexibility
*Data Transfer up to 150M-bits / second
- Clock operation to 75MHz
- Fast Read Dual Output instruction
- Auto-increment Read capability
*Flexible Architecture with 4KB sectors
- Sector Erase (4K-bytes)
- Block Erase (64K-byte)
- Page program up to 256 bytes <2ms
- Up to 100,000 erase/write cycles
- 20-year retention
*Low Power Consumption, Wide Temperature Range
– Single 2.7 to 3.6V supply
- 5mA active current, 1μA Power-down (typ)
- -40° to +85°C operating range
* Software and Hardware Write Protection
- Write-Protect all or portion of memory
- Enable/Disable protection with /WP pin
- Top or bottom array protection
*Space Efficient Packaging
- 8-pin SOIC 150-mil (W25X10/20/40)
- 8-pin SOIC 208-mil (W25X40/80)
- 8-pin PDIP 300-mil (W25X10/20/40/80)
- 8-pin WSON 6x5-mm (W25X10/20/40/80)

W25X20, W25X40, W25X80, W25X10VSNI, W25X20VSNI, W25X40VSNI, W25X80VSNI

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GENERAL DESCRIPTION
MFIDWB (Magnetic Field Identification) is used in all areas of automatic data capture allowing contactless identification of objects using magnetic field. From ticketing to industrial automation and access control, the applications of MFID are burgeoning. In recent years automatic identification procedures have become very popular in many service industries, purchasing and distribution logistics, industry, manufacturing companies and material flow systems.
W55MID15 is one of Winbond MFIDWB (Magnetic Field Identification) series in WinRFWB family that focus on toy and consumer related applications meanwhile W55MID15 provides manufacture bonding-ID transponder. Regarding the MFIDWB Reader series, the W55MID50 supports multifunctional MFIDWB Reader solution. Besides the single transponder application, W55MID35 offers multi-transponder recognition function for intelligent and smart toy applications.
W55MID15 provides total 243 different bonding-IDs in manufacture and 10bit ID length in each ID.
That can extremely save customer's design investment in consumer MFID related products.

FEATURES
*Magnetic field resonance frequency: 13.56 MHz
*Data clock: 32 KHz
*Read-only bonding-ID transponder
*Inductive coupled power supply for no battery operation
*On-chip rectifier, voltage limiter, clock extraction
*10bit bonding-ID length
*Provides Manchester coding data format
*RS0, RS1, RS2, RS3, and RS4 the 3-state bonding finger for the total 243 bonding-ID option in manufacture
*Low power, low voltage operation
*Operating distance: 0 ~ 5cm
*Operating temperature: 0 ~ 70 °C
*Package: Dice form
*Reference design PC board Size: 1.0 x 1.0cm2 (with PCB antenna)
*Winbond patented "3-state Bonding Finger" for multiple bonding-ID option
*Minimize external component: capacitor and PCB antenna only

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GENERAL DESCRIPTION
W83626F/W83626D/W83626G is a transparent LPC-to-ISA bus conversion IC.
For the new generation Intel chipset Camino and Whitney, SiS Super South 960, featuring LPC bus, there is no support for ISA bus and slots. However, the demand of ISA devices still exists. For such case, W83626F/G is the best companion solution for the non-ISA chipset. Also the packages of W83626F/G had been chosen to be the most economic solution for save the M/B board layout size and cost.
For the new generation chipset featuring LPC interface and support no ISA bus, W83627HF/HG (Winbond LPC I/O) together with the set of W83626F/G is the complete solution.

FEATURES
LPC to ISA Bridge
*Meet LPC Spec. 1.1
*Support LDRQ# (LPC DMA), SERIRQ (serial IRQ)
*Full ISA Bus Support except ISA Bus Masters, 16 bit I/O and Memory R/W
*5V ISA and 3.3V LPC interfaces
*All Software Transparent
*IRQ Serializer for ISA Parallel IRQ transfer to Serial IRQ
*Supports 3 fully ISA Compatible Slots without Buffering
*LPC Bus at 33MHz
*Supports Programmable ISA Bus Divide the PCI Clock into 3 or 4
*All ISA Signals can be Isolated
*14.318MHz in to generate two 14.318MHz buffer out and one 24.576MHz
*Specific Keyboard Functions supported
*Support 8 programmable general purpose I/O pins
*Supports Configuration registers for programming performance
Package
*128-pin PQFP for W83626F

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GENERAL DESCRIPTION
The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L020 results in fast program/erase operations with extremely low current consum ption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.

FEATURES
*Single 3.3-volt operations
-3.3-volt Read
-3.3-volt Erase
-3.3-volt Program
*Fast Program operation:
-Byte-by-Byte programming: 50 μS (max.)
*Fast Erase operation:
-Chip Erase cycle time: 100 mS (max.)
-Sector Erase cycle time: 25mS (max.)
-Page Erase cycle time: 25mS (max.)
*Read access time: 70/90 nS
*4 Even sectors with 64K bytes each, which is composed of 16 flexible pages with 4K bytes
*Any individual sector or page can be erased
*Hardware protection:
-Optional 16K byte or 64K byte Top/Bottom Boot Block with lockout protection
*Flexible 4K-page size can be used as Parameter Blocks
*Typical program/erase cycles: 1K/10K
*Twenty-year data retention
*Low power consumption
-Active current: 10 mA (typ.)
-Standby current: 5 μA (typ.)
*End of program detection
-Software method: Toggle bit/Data polling
*TTL compatible I/O
*JEDEC standard byte-wide pinouts
*Available packages: 32L PLCC, 32L TSOP (8 x 20 mm) and 32L STSOP (8 x 14 mm)

W39L020P-70, W39L020P-90, W39L020T-70, W39L020T-90, W39L020Q-70

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GENERAL DESCRIPTION
The W25P10 (1M-bit), W25P20 (2M-bit) and W25P40 (4M-bit) Serial Flash memories provide a
storage solution for systems with limited space, pins and power. They are ideal for code download applications as well as storing voice, text and data. The devices operate on a single 2.7V to 3.6V power supply with current consumption as low as 4mA active and 1μA for power-down. All devices are offered in space-saving 8-pin SOIC type packages as shown below. Contact Winbond for availability of alternate packages. As part of a family of Serial Flash products, Winbond also provides a compatible migration path to 8M/16M/32M-bit densities.
The W25P10/20/40 array is organized into 512/1024/2048 programmable pages of 256-bytes each. A single byte or, up to 256 bytes, can be programmed at a time using the Page Program instruction. Pages are grouped into 2/4/8 erasable sectors of 256 pages (64K-byte) each as shown in figure 2. Both Sector Erase and Chip (full chip) Erase instructions are supported.
The Serial Peripheral Interface (SPI) consists of four pins (Serial Clock, Chip Select, Serial Data In and Serial Data Out) that support high speed serial data transfers up to 40MHz. A Hold pin, Write Protect pin and programmable write protect features provide further control flexibility. Additionally, the device can be queried for manufacturer and device ID. Special customer ID (for copy authentication) and factory programming is available, contact Winbond for more information.
The Winbond W25P10/20/40 are fully compatible with the previous NexFlash NX25P10/20/40 Serial Flash memories.

FEATURES
*1M / 2M / 4M-bit Serial Flash Memories
*Family of Serial Flash Memories
–W25P10: 1M-bit/128K-byte (131,072)
–W25P20: 2M-bit/256K-byte (262,144)
–W25P40: 4M-bit/512K-byte (524,288)
–256-bytes per programmable page
–Migration path to 8M/16M/32M-bit
*4-pin SPI Serial Interface
–Clock, Chip Select, Data In, Data Out
–Easily interfaces to popular microcontrollers
–Compatible with SPI Modes 0 and 3
–Bottom Boot organization (standard)
–Optional Hold function for SPI flexibility
*Low Power Consumption, Wide Temperature Range
–Single 2.7 to 3.6V supply
–4mA active current, 1μA Power-down (typ)
–-40° to +85°C operating range
*Fast and Flexible Serial Data Access
–40MHz Fast Read, 33MHz Standard Read
–Byte-addressable Read and Program
–Auto-increment Read capability
–Manufacturer and Device ID
*Programming Features
–Page program up to 256 bytes <2ms
–Sector Erase (64K-byte) 2 seconds
–Chip erase: 3 seconds (25P10/20), 5 seconds (25P40)
–100,000 erase/write cycles
–Twenty-year data retention
*Software and Hardware Write Protection
–Write-Protect all or portion of memory
–Enable/Disable protection with /WP pin
*Space Saving Package
–Tiny 8-pin SOIC 150mil
*Ideal for systems with limited pins, space, and power
–Controller-based serial code-download
–μC systems storing data, text or voice
–Battery-operated and portable products

W25P20, W25P40, W25P10-VSNI, W25P20-VSNI, W25P40-VSNI

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GENERAL DESCRIPTION
W9812G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 2M words × 4 banks × 16 bits. W9812G6IH delivers a data bandwidth of up to 200M words per second (-5). For different application, W9812G6IH is sorted into the following speed grades: -5/-6/-6C and -75. The –5 is compliant to the 200MHz/CL3 specification. The –6/-6C/-6I is compliant to the 166MHz/CL3 specification (the -6I grade which is guaranteed to support -40°C ~ 85°C). The -75 is compliant to the 133MHz/CL3 specification.
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9812G6IH is ideal for main memory in high performance applications.

FEATURES
*3.3V ± 0.3V Power Supply
*Up to 200 MHz Clock Frequency
*2,097,152 Words × 4 banks × 16 bits organization
*Self Refresh Mode
*CAS Latency: 2 and 3
*Burst Length: 1, 2, 4, 8 and full page
*Burst Read, Single Writes Mode
*Byte Data Controlled by LDQM, UDQM
*Auto-precharge and Controlled Precharge
*4K Refresh cycles / 64 mS
*Interface: LVTTL
*Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

W9812G6IH-5, W9812G6IH-6, W9812G6IH-6C, W9812G6IH-6I, W9812G6IH-75

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GENERAL DESCRIPTION
The W78E052C is an 8-bit microcontroller which can accommodate a wider frequency range with low power consumption. The instruction set for the W78E052C is fully compatible with the standard 8051. The W78E052C contains an 8K bytes Flash EPROM; a 256 bytes RAM; four 8-bit bi-directional and bit-addressable I/O ports; an additional 4-bit I/O port P4; three 16-bit timer/counters; a hardware watchdog timer and a serial port. These peripherals are supported by eight sources two-level interrupt capability. To facilitate programming and verification, the Flash EPROM inside the W78E052C allows the program memory to be programmed and read electronically. Once the code is confirmed, the user can protect the code for security.
The W78E052C microcontroller has two power reduction modes, idle mode and power-down mode, both of which are software selectable. The idle mode turns off the processor clock but allows for continued peripheral operation. The power-down mode stops the crystal oscillator for minimum power consumption. The external clock can be stopped at any time and in any state without affecting the processor.

FEATURES
*Fully static design 8-bit CMOS microcontroller
*Wide supply voltage of 4.5V to 5.5V
*256 bytes of on-chip scratchpad RAM
*8 KB On-chip Flash EPROM
*64 KB program memory address space
*64 KB data memory address space
*Four 8-bit bi-directional ports
*One extra 4-bit bit-addressable I/O port, additional INT2 / INT3 (available on 44-pin PLCC/QFP package)
*Three 16-bit timer/counters
*One full duplex serial port(UART)
*Watchdog Timer
*Eight sources, two-level interrupt capability
*EMI reduction mode
*Built-in power management
*Code protection mechanism
*Packages:
− Lead Free (RoHS) DIP 40: W78E052C40DL
− Lead Free (RoHS) PLCC 44: W78E052C40PL
− Lead Free (RoHS) PQFP 44: W78E052C40FL

W78E052C

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GENERAL DESCRIPTION
The W78L051C is an 8-bit microcontroller which can accommodate a wide supply voltage range with low power consumption. The instruction set for the W78L051C is fully compatible with the standard 8051. The W78L051C contains an 4K bytes Flash EPROM; a 128 bytes RAM; four 8-bit bi-directional and bit-addressable I/O ports; an additional 4-bit I/O port P4; two 16-bit  imer/counters; a hardware watchdog timer and a serial port. These peripherals are supported by seven sources two-leve interrupt capability. To facilitate programming and verification, the Flash EPROM inside the W78L051C allows the program memory to be programmed and read electronically. Once the code is confirmed, the user can protect the code for security.
The W78L051C microcontroller has two power reduction modes, idle mode and power-down mode, both of which are software selectable. The idle mode turns off the processor clock but allows for continued peripheral operation. The power-down mode stops the crystal oscillator for minimum power consumption. The external clock can be stopped at any time and in any state without affecting the processor.

FEATURES
*Fully static design 8-bit CMOS microcontroller
*Wide supply voltage of 2.4V to 5.5V
*128 bytes of on-chip scratchpad RAM
*4 KB electrically erasable/programmable Flash EPROM
*64 KB program memory address space
*64 KB data memory address space
*Four 8-bit bi-directional ports
*One extra 4-bit bit-addressable I/O port, additional INT2 / INT3 (available on 44-pin PLCC/QFP package)
*Two 16-bit timer/counters
*One full duplex serial port (UART)
*Watchdog Timer
*seven sources, two-level interrupt capability
*EMI reduction mode
*Built-in power management
*Code protection mechanism
*Packages:
− Lead Free (RoHS) DIP 40: W78L051C24DL
− Lead Free (RoHS) PLCC 44: W78L051C24PL
− Lead Free (RoHS) PQFP 44: W78L051C24FL

W78L051C, W78L051C24DL, W78L051C24PL, W78L051C24FL

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GENERAL DESCRIPTION
The W77E532A is a fast 8051 compatible microcontroller with a redesigned processor core without wasted clock and memory cycles. As a result, it executes every 8051 instruction faster than the original 8051 for the same crystal speed.
Typically, the instruction executing time of W77E532A is 1.5 to 3 times faster then that of traditional 8051, depending on the type of instruction. In general, the overall performance is about 2.5 times better than the original for the same crystal speed.
Giving the same throughput with lower clock speed, power consumption has been improved. Consequently, the W77E532A is a fully static CMOS design; it can also be operated at a lower crystal clock.
The W77E532A contains In-System Programmable(ISP) 128 KB bank-addressed Flash EPROM; 4KB auxiliary Flash EPROM for loader program; operating voltage from 4.5V to 5.5V; on-chip 1 KB MOVX SRAM; three power saving modes.

FEATURES
* 8-bit CMOS microcontroller
* High speed architecture of 4 clocks/machine cycle runs up to 40 MHz
* Pin compatible with standard 80C52
* Instruction-set compatible with MCS-51
* Four 8-bit I/O Ports; Port 0 has internal pull-up resisters enabled by software
* One extra 4-bit I/O port, chip select and Wait State control signal (available on 44-pin PLCC/QFP package)
* Three 16-bit Timers
* 12 interrupt sources with two levels of priority
* On-chip oscillator and clock circuitry
* Two enhanced full duplex serial ports
* Dual 64KB In-System Programmable Flash EPROM banks (APFLASH0 and APFLASH1)
* 4KB Auxiliary Flash EPROM for loader program (LDFLASH)
* 64 Bytes Non-Volatile Memory for critical date storage.
* 256 bytes scratch-pad RAM
* 1 KB on-chip SRAM for MOVX instruction
* Programmable Watchdog Timer
* Software Reset
* Dual 16-bit Data Pointers
* Software programmable access cycle to external RAM/peripherals
* Packages:
- Lead Free(RoHS) DIP 40: W77E532A40DL
- Lead Free(RoHS) PLCC 44: W77E532A40PL
- Lead Free(RoHS) QFP 44: W77E532A40FL
TAG 8-bit

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GENERAL DESCRIPTION
 W9864G6IH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 1M words × 4 banks × 16 bits.
W9864G6IH delivers a data bandwidth of up to 200M words per second.
For different application, W9864G6IH is sorted into the following speed grades: -5, -6, -7/-7S. The -5 parts can run up to 200MHz/CL3.
The -6 parts can run up to 166MHz/CL3.
The -7/-7S parts can run up to 143MHz/CL3.
And the grade of -7S with tRP = 18nS.
Accesses to the SDRAM are burst oriented.
Consecutive memory location in one page can be
accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command.
Column addresses are automatically generated by the SDRAM internal counter in burst operation.
Random column read is also possible by providing its address at each clock cycle.
The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance.
W9864G6IH is ideal for main memory in high performance applications.

FEATURES
* 3.3V± 0.3V for -5/-6 speed grades power supply
* 2. 7V~3.6V for -7/-7S speed grades power supply
* 1,048,576 words × 4 banks × 16 bits organization
* Self Refresh Current: Standard and Low Power
* CAS Latency: 2 & 3
* Burst Length: 1, 2, 4, 8 and full page
* Sequential and Interleave Burst
* Byte data controlled by LDQM, UDQM
* Auto-precharge and controlled precharge
* Burst read, single write operation
* 4K refresh cycles/64mS
* Interface: LVTTL
* Packaged in TSOP II 54-pin, 400 mil using Lead free materials with RoHS compliant

W9864G6IH-5
W9864G6IH-6
W9864G6IH-7
W9864G6IH-7S

TAG Bank, SDRAM

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