* DESCRIPTION
 The UTC 3N60 is a high voltage and high current power MOSFET , designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
 This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

- FEATURES
* RDS(ON) = 3.6Ω @VGS = 10 V
* Ultra low gate charge ( typical 10 nC )
* Low reverse transfer capacitance ( CRSS = typical 5.5 pF )
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness

3N60L-A-TA3-T
3N60L-B-TA3-T
3N60-A-TA3-T
3N60-B-TA3-T

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DESCRIPTION
The UTC S8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications.

FEATURES
*Collector current up to 700mA
*Collector-Emitter voltage up to 20 V
*Complementary to S8550

S8050

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DESCRIPTION
These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .

FEATURES
* Reverse Biased SOA with Inductive Load @ Tc=100℃
* Inductive Switching Matrix 0.5 ~ 1.5 Amp, 25 and 100℃ Typical tc = 290ns @ 1A, 100℃.
* 700V Blocking Capability

APPLICATIONS
* Switching Regulator’s, Inverters
* Motor Controls
* Solenoid/Relay drivers
* Deflection circuits

MJE13003L-A-TA3-F-T MJE13003L-B-TA3-F-T MJE13003L-C-TA3-F-T
MJE13003L-D-TA3-F-T MJE13003L-E-TA3-F-T MJE13003L-F-TA3-F-T

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