Product Description
TQM640002 RF front end module (FEM) is an active device for GPS applications (center frequency 1575.42 MHz). It is designed for simultaneous GPS + voice in multi-function handsets. The FEM is comprised of a low-power flip-chip LNA die, a pair of high-performance SAW filters, and integrated passive matching circuitry. The module will operate at 1.8v or 2.8v bias and its current consumption – typically 5.0 mA – is not changed by DC supply, making it suitable for use in lowpower applications & during low-battery situations. The FEM performance exhibits high in-band gain and excellent rejection in all the key cellular & WLAN/Bluetooth bands. The device also exhibits both a high intercept point & a low noise figure, which optimally addresses today’s most stringent GPS front end receiver requirements.

Features
*Low noise figure & high associated gain for high IP3 receiver stages for 1575 MHz
*NF = 1.56 dB; Gain=16 dB @ 1.8V
*No external matching components required
*Low current consumption & low voltage operation
*High immunity against inband compression due to out-of-band interferers during simultaneous GPS + voice operation
*Input and output internally pre-matched to 50 W
*Low cost miniature package 3 x 3 x 1.0 mm
-suitable for low profile handset applications
*Power-up control for the LNA
*Designed to operate at 1.8V, with enhanced linearity performance at 2.8V
*Halogen-free

Applications
*1575.42 MHz, L1 band GPS applications
*Personal Navigation Devices
*Cellular Handsets: Simultaneous GPS + voice calls

TQM640002GEL, TQM640002TR

Product Description
The TQ3132 is a low current, 3V, RF LNA IC designed specifically for Cellular band CDMA/AMPS applications. It’s RF performance meets the requirements of products designed to the IS-95 and AMPS standards. The TQ3132 is designed to be used with the TQ5131 or TQ5132 (CDMA/AMPS mixer) which provides a complete CDMA receiver for 800MHz dual-mode phones.
The LNA incorporates on-chip switches which determine CDMA, AMPS, and bypass mode select. When used with the TQ5131 or TQ5132 (CDMA RFA/mixer), four gain states are available. The RF output port is internally matched to 50 Ω, greatly simplifying the design and keeping the number of external components to a minimum. The TQ3132 achieves good RF performance with low current
consumption, supporting long standby times in portable applications. Coupled with the very small SOT23-8 package, the part is ideally suited for Cellular band mobile phones.

Features
*Small size: SOT23-8
*Single 3V operation
*Low-current operation
*Gain Select
*Mode Select
*High IP3 performance
*Few external components
*50Ω Output

Applications
*IS-95 CDMA Mobile Phones
*AMPS Mobile Phones
*Dual Mode CDMA Cellular applications
*832-870MHz CDMA applications

Product Description
TriQuint’s TQM613017 is a fully matched PA/Duplexer, Front End Module (FEM) for CDMA/AMPS use in mobile phones. The 8 x 5 x 1.52 mm, 22-pin module includes an integrated SAW Duplexer, Power Amplifier, Transmit filter, RF Power Detector and Logic Controller. With an RF Power Output up to 25.5dBm the TQM613017 FEM meets the strict ACPR and ALTR requirements for products designed to the IS-95/98 standards. The quiescent current of the PA/Duplexer is set by the base-band processor using a 1-bit bias control (Vmode) to minimize battery consumption and maximize talk time.
TriQuint’s multilayer laminate technology provides low loss interconnect and optimized match between the duplexer, PA and filter enabling the TQM613017 to achieve typically 430 mA current consumption at maximum output power (+25.5dBm). The small 8.0 × 5.0 mm module replaces four separate components requiring less board space. TQM613107 provides handset designers with a simple to use surface mount module requiring minimal external circuitry in the new generation of small and light phones.

Features
*InGaP GaAs HBT PA
*Low Current Consumption Typical: 460mA @ +25.5dBm
*Low Quiescent Current Typical: 40mA
*1-Bit Bias Control for Extended Talk Time
*Integrated power detector
*Integrated duplexer and interstage filter
*Excellent ACPR Typical: -51 dBc @ +/- 885kHz offset
*Excellent ALTR Typical: -60 dBc @ +/- 1.98 MHz offset
*Low Voltage Operation 1.3 V to 4.4 V
*Small Profile 22 pins, 8.0 x 5.0 x 1.52 mm
*Reduced Phone Board Space Replaces 4 Separate Components
*Easy to use with few External Components Internally matched inputs and outputs

Applications
*IS-95/CDMA2000
*Single-Mode, Dual Mode, and Tri Mode CDMA/AMPS phones

General Description
The 0.5-μm Heterostructure FET (HFET) process is a depletion-mode 2MI (2-metal-interconnect) process for applications through 20 GHz. The HFET I-V characteristics provide for high power, high linearity, extraordinary transconductance uniformity and high breakdown voltages. Passives include 2 thick-metal interconnect layers, precision TaN resistors, GaAs resistors, MIM capacitors and throughsubstrate vias. The capacitor-over-via process aides in size compaction and offers excellent grounds at higher frequencies.

Features
*0.5-μm amplifier transistors
*0.5-μm switch transistors
*0.5-μm diodes
*Device passivation
*High-Q passives
*MIM capacitors
*TaN resistors
*GaAs resistors
*2 metal layers
*Air bridges
*Substrate vias
*Operation up to Vd = 10 V

Applications
*Up to 20 GHz
*Communications
*Space
*Military
*Power amplifiers
*Driver amplifiers
*AGC amplifiers
*Limiting amplifiers
*Transimpedance amplifiers
*Differential amplifiers

Product Description
The AP561 is a high dynamic range broadband power amplifier in a surface mount package. The single-stage amplifier has 13.8 dB gain, while being able to achieve high performance for 2.3–2.9 GHz WiMAX applications with up to 39 dBm of compressed 1dB power.
The AP561 uses a high reliability +12V InGaP/GaAs HBT process technology. The device incorporates proprietary bias circuitry to compensate for variations in linearity and current draw over temperature. The device does not require any negative bias voltage; an internal active bias allows the AP561 to operate directly off a commonly used +12V supply and has the added feature of a +5V power down control pin. RoHS-compliant 5x6mm DFN package is surface mountable to allow for low manufacturing costs to the end user.
The AP561 is targeted for use in a balanced or single ended configuration for WiMAX or WiBro applications where high linearity and high power is required.

Product Features
*2.3 – 2.9 GHz
*+39 dBm P1dB
*13.8 dB Gain
*1.4% EVM @ 30 dBm Pout
*+12 V Supply Voltage
*Lead-free/green/RoHS-compliant 5x6 mm power DFN package

Applications
*WiMAX CPE/BTS
*WiBro CPE/BTS

AP561-F, AP561-PCB2500

Product Description
The WJA1030 is a cascadable gain block that offers high linearity in a low-cost surface-mount package. At 1.9 GHz, the WJA1030 typically provides 15 dB gain, +37 dBm OIP3, and +18 dBm P1dB. The device is housed in a RoHS-compliant SOT-89 industry-standard SMT package
using a NiPdAu plating to eliminate the possibility of tin whiskering.
The WJA1030 consists of Darlington pair amplifiers using a high reliability InGaP/GaAs HBT process technology. The MMIC amplifier is internally matched to 50 and only requires DC-blocking capacitors and a bias inductor for operation. An internal active bias is designed to enable stable performance over temperature. A dropping bias resistor is not required allowing the device to be biased directly from a +5V supply voltage.
The broadband amplifier can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA, WiBro, and WiMAX. The WJA1030 is ideal for general purpose applications such as LO buffering, IF amplification and pre-driver stages within the 50 to 4000 MHz frequency range.

Product Features
*Cascadable gain block
*50 – 4000 MHz
*15 dB Gain @ 1.9GHz
*+18 dBm P1dB @ 1.9GHz
*+37 dBm OIP3 @ 1.9GHz
*Operates from +5V @ 80mA
*0.2dB gain flatness from 0.3-2.5GHz
*Robust 1000V ESD, Class 1C
*RoHS-compliant SOT-89 package

Applications
*Wireless Infrastructure
*General Purpose
*Cellular GSM, PCS, UMTS
*W-CDMA, TD-SCDMA, WiMAX

WJA1030-PCB

Product Description
The Tritium III PAD Module ™ is an integrated 3V Linear Power Amplifier, Duplexer and Transmit Filter Module including a highly accurate Output Power Detector designed for mobile UMTS handset applications, supporting HSUPA operation with transmission data-rates up to 10Mb/s.
It features 2 output power modes, additional continuous bias in low power mode, low off and standby currents, and a separate pin for module enable. RF input and output matching is included within the module; therefore, minimal external circuitry is required.
Tritium III gives excellent RF performance with low current consumption resulting in longer talk times in portable applications. The tiny 7x4x1.1 mm³ surface mount package is ideal for new generation slim, small and light phones.

Features
*Handset Tritium III™ (PA-Duplexer) Module for UMTS Band I (IMT2100 band)
*Specified for HSUPA Modulation (Transmission Data-Rates up to 10Mb/s)
*Integrates Power Amplifier, Highly Accurate Output Power Detector, Transmit Filter and Duplexer
*No Regulated Voltage Required
*Separate ‘Module Enable’ Pin
*All RF Ports Matched to 50 Ω
*Low Current Consumption: – 2 Power Modes
– Continuous Bias in Low Power Mode – Extremely Low Idle Current (15mA typ.) in Low Power Mode
*Compatible for Low Collector Voltage Operation with DC-DC-Converters

Applications
*3G UMTS Handsets and Data-Cards

Product Description
TriQuint’s TQM613027 is a fully matched CDMA cellular band PA/Duplexer (PAD) module for use in mobile phones.
The 7.0 x 4.0 x 1.2 mm, 20-pin module includes a SAW Duplexer, Power Amplifier, Differential input transmit filter, RF Power Coupler and Logic Controller.
With an RF Power Output up to 25.5dBm the TQM613027 PAD meets the strict ACPR and ALTR requirements for products designed to the CDMA IS-95/98/2000 standards.
It’s thin form factor and compact size, coupled with the low quiescent current, makes the TQM613027 ideal for today’s compact feature rich multi-media handsets requiring longer battery life.
TriQuint’s multilayer laminate technology provides low loss interconnect and optimized match between the duplexer, PA and filter enabling the TQM613027 to achieve only 40 mA of typical current consumption at maximum output power in low power mode (+13.5dBm).
The small 7.0 × 4.0 mm module replaces four separate components and matching requiring less board space.
TQM613027 provides handset designers with a simple to use surface mount module requiring minimal external circuitry for faster time to market and reduced BOM count.

Features
* InGaP GaAs HBT PA with high efficiency at low power architecture
* Low Quiescent Current
- Typical: 18 mA
* Low Current Consumption
- Typical: 430 mA @ +25.5dBm
- Typical: 415 mA @ +24.5dBm
- Typical: 40 mA @ +13.5dBm
* Excellent ACPR
- Typical: -50 dBc @ +/- 885kHz offset
* Excellent ALTR
- Typical: -60 dBc @ +/- 1.98 MHz offset
* Lead-free 260°C RoHS Compliant
* Small 20-pin, 7.0x4.0mm module with matching replacing ~10 discrete components
* Height of 1.17mm for thin phones
* Integrated duplexer, coupler, differential input transmit filter and matching
* Optimized for use with Qualcomm’s QSC6010/20/30TM single chip devices

Applications
* IS-95/98/CDMA2000
* Single-band CDMA Cellular radios

Product Description
The WJZ1020H is a passive double-balanced diode-ring mixer that provides high dynamic range performance in a Lead Free/ RoHS-compliant surface mount package.
The mixer is nominally driven with a LO input power of +17dBm to optimize its performance. Other WJZ models are available for other LO drive levels.
Targeted applications include frequency up/down conversion, modulation and demodulation for receivers and transmitters used in 2.5G and 3G GSM/CDMA/W-CDMA systems.
The device can also be used in Radar, Satellite,
Test / Medical Instruments, Avionics communications and Navigation markets.

Product Features
* +27.8 dBm Input IP3
* RF: 1 – 2700 MHz
* LO: 1 – 2700 MHz
* IF: 1 – 2000 MHz
* +17 dBm LO Drive Level
* No Internal Solder Connections
* Lead Free/RoHS-compliant SMT package
* No External Bias Required

Applications
* Up/down frequency conversion
* Phase Detector
* Image Rejection
* Current Controlled Attenuator

WJZ1020H-PCB

Product Description
 The TQM713024 is a 3V, 2 stage GaAs HBT Power Amplifier Module designed for use in mobile phones.
Its compact 3x3mm package makes it ideal for today’s extremely small data enabled phones.
Its RF performance meets the requirements for IS-95/98/CDMA2000 & WCDMA Rel99 standards.
The TQM713024 is designed on TriQuint’s advanced InGaP HBT GaAs technology offering state of the art reliability, temperature stability and ruggedness.
Selectable bias mode and a shutdown mode with low leakage current, improve talk and standby time.
The output match, realized within the module package, optimizes efficiency/linearity at maximum rated output power.
The TQM713024 has robust performance into mismatch and excellent linearity margin under all operating conditions including the ability to operate in LP Mode all the way to full output power.

Features
* InGaP HBT Technology
* High Efficiency: 38% @ 28dBm
* Capable of running as 0-bit PA in low bias mode to 28dBm
* Supports new chipsets with Vref@2.6V
* Optimized for 50 ohm System
* Small 8-pin, 3x3mm module
* Excellent Rx band noise performance
* Lead-free 260°C RoHS Compliant
* Full ESD Protection

Applications
* IS-95/CDMA2000
* Single/Dual/Tri Mode CDMA/AMPS phones