DESCRIPTION
The fundamental of SP6003A synchronous rectifier (SR) driver IC is based on our U.S. patented methods that utilize the principle of “prediction” logic circuit. The IC deliberates previous cycle timing to control the SR in present cycle by “predictive” algorithm that makes adjustments to the turn-off time, in order to achieve maximum efficiency and avoid cross-conduction at the same time. It also maintains the MOSFET’s body diode conduction at minimum level. The SP6003A is capable to adapt in almost all existing flyback converters with few adjustments considered necessary.

FEATURES
• Offers efficiency improvement over Schottky Diode (depends on drive configuration of the
SR).
• Drives all logic level Power MOSFET.
• Prediction gate timing control.
• Minimum MOSFET body diode conduction.
• Operating frequency up to 650 KHz.
• Synchronize to transformer secondary voltage waveform.

APPLICATIONS
• Servers & workstations
• Storage area network power supplies
• Telecommunication converters
• Embedded systems
• Industrial & commercial systems using high current processors

SP6003AS8RG
SP6003AS8TG

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DESCRIPTION
The SPC4539 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
* N-Channel
30V/6.8A,RDS(ON)= 34mΩ@VGS= 10V
30V/5.6A,RDS(ON)= 46mΩ@VGS= 4.5V
* P-Channel
-30V/-5.7A,RDS(ON)= 60mΩ@VGS=- 10V
-30V/-4.4A,RDS(ON)= 80mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and maximum DC
current capability
* SOP – 8P package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

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DESCRIPTION
The SPP2301 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

FEATURES
* -20V/-2.8A,RDS(ON)=120mΩ@VGS=-4.5V
* -20V/-2.0A,RDS(ON)=170mΩ@VGS=-2.5V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

SPP2301S23RG

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