DESCRIPTION
The SP433 is high-voltage four-terminal adjustable voltage references, with over current protection feature. The SP433 is a one chip solution to a 2.5V precision voltage reference and constant current output in the application of secondary feedback control of power supply, DC/DC converter, adaptor and charger. SP433 is idea for low cost switching power supply application.

FEATURES
*Voltage Reference Accuracy of 0.5% & 1.0%
*Sink Current Capability from 1mA to 100mA
*Adjustable Output Voltage from VREF to 18V
*Low Output Noise
*Typical Output Dynamic Impedance Less Than 200mΩ
*Available in SOT-23-5L and TO-94 package
*Over Current Protection

APPLICATIONS
*Battery Charger
*Battery Power Equipment
*Linear Regulators
*Switch Power Supply
*Cellular Phone
*Digital Cameras
*Computer Disk Drivers
*Instrumentation

SP433AS25RGB, SP433BS25RGB, SP433AT94AGB, SP433BT94AGB

DESCRIPTION
The SPP2303 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*-30V/-2.6A,RDS(ON)=130mΩ@VGS=- 10V
*-30V/-2.0A,RDS(ON)=180mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-23-3L package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPP2303S23RG

DESCRIPTION
The SPP3095 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as DC/DC converter and Desktop computer power management.
The package is universally preferred for commercial industrial surface mount applications

FEATURES
*-30V/- 8A,RDS(ON)=100mΩ@VGS=- 10V
*-30V/- 6A,RDS(ON)=135mΩ@VGS=-4.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TO-252-2L package design

APPLICATIONS
*Power Management in Desktop Computer
*DC/DC Converter
*LCD Display inverter

SPP3095T252RG

DESCRIPTION
The SPN1443A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
*30V/2.8A,RDS(ON)= 95mΩ@VGS=10V
*30V/2.3A,RDS(ON)= 105mΩ@VGS=4.5V
*30V/1.5A,RDS(ON)= 135mΩ@VGS=2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*SOT-353 ( SC–70 ) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPN1443AS35RG

DESCRIPTION
The SPC6601 is the N- and P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
-30V/2.8A,RDS(ON)= 68mΩ@VGS=10V
-30V/2.3A,RDS(ON)= 78mΩ@VGS=4.5V
-30V/1.5A,RDS(ON)= 108mΩ@VGS=2.5V
*P-Channel
-30V/-2.8A,RDS(ON)=105mΩ@VGS=- 10V
-30V/-2.5A,RDS(ON)=120mΩ@VGS=-4.5V
-30V/-1.5A,RDS(ON)=150mΩ@VGS=-2.5V
*Super high density cell design for extremely low RDS (ON)
*Exceptional on-resistance and maximum DC current capability
*TSOP– 6P package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC6601ST6RG

DESCRIPTION
The SPE0511 are designed by TVS device that is to protect sensitive electronics from damage or latch-up due to ESD. They are designed for use in applications where board space is at a premium. SPE0511 will protect single line, and may be used on line where the signal polarities swing above and below ground.
SPE0511 offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation.
SPE0511 may be used to meet the immunity requirements of IEC 61000-4-2, level 4. The small SOD-523 package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.

FEATURES
*Transient protection for data lines to
- IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- IEC 61000-4-4 (EFT) 40A (5/50ns)
*Protects single I/O lines
*Working voltage: 5V
*Low leakage current
*Low operating and clamping voltages

APPLICATIONS
*Cellular Handsets and Accessories
*Cordless Phone
*PDA
*Notebooks and Handhelds
*Portable Instrumentation
*Digital Cameras
*MP3 Player

SPE0511D52RG

DESCRIPTION
The SPC1016 is the Dual P-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where high-side switching , low in-line power loss, and resistance to transients are needed.

FEATURES
*N-Channel
- 20V/0.65A,RDS(ON)=380mΩ@VGS=4.5V
- 20V/0.55A,RDS(ON)=450mΩ@VGS=2.5V
- 20V/0.45A,RDS(ON)=800mΩ@VGS=1.8V
*P-Channel
- 20V/0.45A,RDS(ON)=0.52Ω@VGS=-4.5V
- 20V/0.35A,RDS(ON)=0.70Ω@VGS=-2.5V
- 20V/0.25A,RDS(ON)=0.95Ω@VGS=-1.8V
*Super high density cell design for extremely low RDS (ON)
*exceptional on-resistance and maximum DC current capability
*SOT-563 (SC-89-6L) package design

APPLICATIONS
*Power Management in Note book
*Portable Equipment
*Battery Powered System
*DC/DC Converter
*Load Switch
*DSC
*LCD Display inverter

SPC1016S56RG

DESCRIPTION
The SP432 is low-voltage three-terminal adjustable voltage references, with specified thermal stability over applicable industrial and commercial temperature ranges.
Output voltage can be set to any value between VREF (1.24V) and 20V with two external resistors.
These devices have a typical output impedance of 0.25Ω. Active output circuitry provides a very sharp turn-on characteristic, making the SP432 excellent replacements for low-voltage Zener diodes in many applications, including onboard regulation and adjustable power supplies.

FEATURES
*Low-Voltage Operation --- Down to 1.24 V
*Adjustable Output Voltage, VO = Vref to 20 V
*Low Operational Cathode Current --- 80uA ( Typ)
*0.25Ω Typical Output Impedance

APPLICATIONS
*Battery Power Equipment
*Linear Regulators
*Switch Power Supply
*Cellular Phone
*Digital Cameras
*Computer Disk Drivers
*Instrumentation

SP432AS23RG
SP432BS23RG

DESCRIPTION
The SPE0512 are designed by TVS device that is to protect sensitive electronics from damage or latch-up due to ESD.
They are designed for use in applications where board space is at a premium.
SPE0512 will protect up to two lines, and may be used on lines where the signal polarities swing above and below ground.
SPE0512 offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation.
SPE0512 may be used to meet the immunity requirements of IEC 61000-4-2, level 4.
The small SOT-523 package makes them ideal for use in portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.

FEATURES
* Transient protection for data lines to
- IEC 61000-4-2 (ESD) ±15kV (air), ±8kV (contact)
- IEC 61000-4-4 (EFT) 40A (5/50ns)
* Protects two I/O lines
* Working voltage: 5V
* Low leakage current
* Low operating and clamping voltages

APPLICATIONS
* Cellular Handsets and Accessories
* Cordless Phone
* PDA
* Notebooks and Handhelds
* Portable Instrumentation
* Digital Cameras
* MP3 Player

SPE0512S52RG

DESCRIPTION
 The SPN2302A is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching , and low in-line power loss are needed in a very small outline surface mount package.

FEATURES
* 20V/4.0A,RDS(ON)=75mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=95mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=135mΩ@VGS=1.8V
* Super high density cell design for extremely low RDS (ON)
* Exceptional on-resistance and maximum DC current capability
* SOT-23-3L package design

APPLICATIONS
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Load Switch
* DSC
* LCD Display inverter

SPN2302AS23RG