GENERAL DESCRIPTION
The ML5805 is a single chip fully integrated Frequency Shift Keyed (FSK) transceiver developed for a variety of applications operating in the 5.725GHz to 5.850GHz unlicensed ISM band. The ML5805 is mode selectable for operation with digital cordless phones (DSSS or DECT) and higher data rate streaming applications like wireless audio and video.
The ML5805 contains a dual-conversion low-IF receiver with all channel selectivity on chip. IF filtering, IF gain, and demodulation are performed on-chip, eliminating the need for any external IF filters or production tuning. A post detection filter and a data slicer are integrated to complete the receiver.
The ML5805 transmitter uses an adjustment-free closed loop modulator, which modulates the on-chip VCO with filtered data. The ML5805 includes an upconversion mixer, a buffer/predriver, and a power amplifier to produce a typical output power of +21dBm. A fully integrated fractional synthesizer is used in both receive and transmit modes. Power supply regulation is included in the ML5805, providing circuit isolation and consistent performance over supply voltages between 2.8V-3.6V.
FEATURES
*Highly integrated 5.8GHz FSK Transceiver with selectable data rates; 576kbps, 1.152Mbps, 1.536Mbps, 1.755Mpbs, 2.048Mbps
*Fractional-N synthesizer with 30 Hz resolution
*Low-IF receiver eliminates external IF filters
*Fully integrated digital FIR Tx data filter, IF filters, FM discriminator, and Rx data filter.
*Self-calibrating VCO and filters eliminate tuning.
*Operating Modes include DSSS-DCT, DECT, and high rate (2.048Mbps) for wireless audio and video
*-97dBm sensitivity (0.1%BER) with Integrated LNA
*+21dBm typical output power from Integrated PA
*Includes FastWave™ embedded wireless microcontroller technology
*Simple 3-wire control interface
*TR PIN diode or FET switch driver outputs
*Analog RSSI output: 35mV/dB
*Selectable Rx clock recovery output
*40 QFN package (6mm x 6mm)
APPLICATIONS
*Digital Cordless Telephones DSSS & DECT
*Wireless Streaming Audio and Video
*Wireless Data Links
ML5805DM, ML5805DM-T
Product Description
RFMD’s SPA-1426Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1426Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness and a hand reworkable and thermally enhanced SOF-26 package.
Features
*P1dB=29.5dBm @ 2140MHz
*ACP = -65dBc with 17.0dBm Channel Power @ 2140MHz
*Low Thermal Resistance Package
*Power Up/Down Control<1μs
*Robust Class 1C ESD
Applications
*Macro/Micro-Cell Driver Stage
*Pico-Cell Output Stage
*GSM, CDMA, TDSCDMA, WCDMA, IS-95
*Single and Multi-Carrier Applications
SPA-1426Z-EVB1, SPA-1426Z-EVB2, SPA-1426Z-EVB3
Product Description
RFMD’s SPA-1526Z is a high linearity single-stage class A Heterojunction Bipolar Transistor (HBT) power amplifier. The SPA-1526Z is made with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. It is well suited for use as a driver stage in macro/micro-cell infrastructure equipment, or as the final output stage in pico-cell infrastructure equipment. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a hand reworkable and thermally enhanced SOF-26 package.
Features
*P1dB=32dBm @ 2140MHz
*ACP=-65dBc with 18.4dBm Channel Power @ 2140MHz
*Low Thermal Resistance Package
*Power Up/Down Control<1μs
*Robust Class 1C ESD
Applications
*Macro/Micro-Cell Driver Stage
*Pico-Cell Output Stage
*GSM, CDMA, TDSCDMA, WCDMA, IS-95
*Single and Multi-Carrier Applications
SPA-1526Z-EVB1, SPA-1526Z-EVB2, SPA-1526Z-EVB3
Product Description
The SPF-5043Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5043Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.
Features
*Ultra-Low Noise Figure=0.8dB @ 900MHz
*Gain=18.2dB @ 900MHz
*High Linearity: OIP3=35dBm @ 1900MHz
*P1dB=21dBm @ 1900MHz
*Single-Supply Operation: 5V @ IDQ=46mA
*Flexible Biasing Options: 3V to 5V, Adjustable Current
*Broadband Internal Matching
Applications
*Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
*Low Noise, High Linearity Gain Block Applications
SPF-5043Z-EVB1
Product Description
The SPF-5122Z is a high performance pHEMT MMIC LNA designed for operation from 50MHz to 4000MHz. The on-chip active bias network provides stable current over temperature and process threshold voltage variations. The SPF-5122Z offers ultra-low noise figure and high linearity performance in a gain block configuration. Its single-supply operation and integrated matching networks make implementation remarkably simple. A high maximum input power specification make it ideal for high dynamic range receivers.
Features
*Ultra-Low Noise Figure=0.60dB @ 900MHz
*Gain=18.9dB @ 900MHz
*High Linearity: OIP3=40.5dBm @ 1900MHz
*Channel Power=13.4dBm (-65dBc IS95 ACPR, 880MHz)
*P1dB=23.4dBm @ 1900MHz
*Single-Supply Operation: 5V @ Idq=90mA
*Flexible Biasing Options: 3-5V, Adjustable Current
*Broadband Internal Matching
Applications
*Cellular, PCS, W-CDMA, ISM, WiMAX Receivers
*PA Driver Amplifier
*Low Noise, High Linearity Gain Block Applications
SPF-5122Z-EVB1
Product Description
RFMD’s SBB-3089Z is a high performance InGaP HBT MMIC amplifier utilizing a Darlington configuration with an active bias network. The active bias network provides stable current over temperature and process Beta variations. The SBB-3089Z product is designed for high linearity 5V gain block applications that require excellent gain flatness, small size, and minimal external components. It is internally matched to 50Ω.
Features
*Single Fixed 5V Supply
*Patented Self Bias Circuit and Thermal Design
*Gain=16.4dBm at 1950MHz
*P1dB=15.2dBm at 1950MHz
*OIP3=29.5dBm at 1950MHz
*Robust 1000V ESD, Class 1C HBM
*MSL 1 Moisture Rating
Applications
*PA Driver Amplifier
*Cellular, PCS, GSM, UMTS
*IF Amplifier
*Wireless Data, Satellite
*Wideband Instrumentation
SBB-3089Z-EVB1
Product Description
The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control. The device is self-contained with 50Ω input and output terminals. The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output.
The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz, and 1850MHz to 1910MHz bands. On-board power control provides over 37dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation.
Features
*Complete Power Control Solution
*Single 2.9V to 5.5V Supply Voltage
*+35dBm GSM Output Power at 3.5V
*+33dBm DCS/PCS Output Power at 3.5V
*55% GSM and 52% DCS/PCS ηEFF
Typical Applications
*3V Quad-Band GSM Handsets
*Commercial and Consumer Systems
*Portable Battery-Powered Equipment
*GSM850, EGSM900, DCS/PCS Products
*GPRS Class 12 Compatible
RF3133PCBA-41X
Product Description
The RF2312 is a general purpose, low cost high linearity RF amplifier IC.
The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor
(HBT) process, and has been designed for use as an easily cascadable 75Ω gain block.
The gain flatness of better than 0.5dB from 5MHz to 1000MHz, and the high linearity, make this part ideal for cable TV applications.
Other applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 2500MHz.
The device is self-contained with 75Ω input and output impedances, and requires only two external DC biasing elements to operate as specified.
Features
*DC to well over 2500MHz Operation
*Internally Matched Input and Output
*15dB Small Signal Gain
*3.8dB Noise Figure
*+20dBm Output Power
*Single 5V to 12V Positive Power Supply
Typical Applications
*CATV Distribution Amplifiers
*Cable Modems
*Broadband Gain Blocks
*Laser Diode Driver
*Return Channel Amplifier
*Base Stations
RF2312
RF2312 PCBA
Product Description
The RF3807 is a GaAs pre-driver power amplifier, specifically designed for wireless
infrastructure applications.
Using a highly reliable GaAs HBT fabrication process, this high-performance single-stage amplifier achieves high output power over a broad frequency range.
The RF3807 also provides excellent efficiency and thermal stability through the use of a thermally-enhanced surface-mount plastic-slug package.
Ease of integration is accomplished through the incorporation of an optimized evaluation board design provided to achieve proper 50Ω operation.
Various evaluation boards are available to address a broad range of wireless infrastructure applications: NMT 450MHz, GSM850, GSM900, DCS1800, PCS1900, and UMTS2100.
Features
* Output Power>0.5W P1dB
* High Linearity
* High Power-Added Efficiency
* Thermally-Enhanced Packaging
* Broadband Platform Design Approach, 450MHz to 2700MHz
Applications
* GaAs Pre-Driver for Basestation Amplifiers
* PA Stage for Commercial Wireless Infrastructure
* Class AB Operation for NMT, GSM, DCS, PCS, UMTS, and WLAN Transceiver Applications
* 2nd/3rd Stage LNA for Wireless Infrastructure
RF3807PCK-410
RF3807PCK-411
RF3807PCK-412
RF3807PCK-413
RF3807PCK-414
RF3807PCK-415
Product Description
The RF3133 is a high-power, high-efficiency power amplifier module with integrated power control.
The device is self-contained with 50Ω input and output terminals.
The power control function is also incorporated, eliminating the need for directional couplers, detector diodes, power control ASICs and other power control circuitry; this allows the module to be driven directly from the DAC output.
The device is designed for use as the final RF amplifier in GSM850, EGSM900, DCS and PCS handheld digital cellular equipment and other applications in the 824MHz to 849MHz, 880MHz to 915MHz, 1710MHz to 1785MHz, and 1850MHz to 1910MHz bands.
On-board power control provides over 37dB of control range with an analog voltage input; and, power down with a logic “low” for standby operation.
Features
* Complete Power Control Solution
* Single 2.9V to 5.5V Supply Voltage
* +35dBm GSM Output Power at 3.5V
* +33dBm DCS/PCS Output Power at 3.5V
* 55% GSM and 52% DCS/PCS ηEFF
Typical Applications
* 3V Quad-Band GSM Handsets
* Commercial and Consumer Systems
* Portable Battery-Powered Equipment
* GSM850, EGSM900, DCS/PCS Products
* GPRS Class 12 Compatible
RF3133
RF3133PCBA
