DESCRIPTION
M63816P/FP/KP are eight-circuit Single transistor arrays with clamping diodes. The circuits are made of NPN transistors. Both the semiconductor integrated circuits perform high-current driving with extremely low input-current supply.
FEATURES
*Three package configurations (P, FP, and KP)
*Medium breakdown voltage (BVCEO ³ 35V)
*Synchronizing current (IC(max) = 300mA)
*With clamping diodes
*Low output saturation voltage
*Wide operating temperature range (Ta = –40 to +85°C)
APPLICATION
Driving of digit drives of indication elements (LEDs and lamps) with small signals
M63816FP, M63816KP
Description
Mitsubishi IGBT Modules are designed for use in switching applications. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features
*Low Drive Power
*Low VCE(sat)
*Discrete Super-Fast Recovery Free-Wheel Diode
*High Frequency Operation
*Isolated Baseplate for Easy Heat Sinking
Applications
*AC Motor Control
*Motion/Servo Control
*UPS
*Welding Power Supplies
DESCRIPTION
The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum). The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 400-470MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
RA30H4047M1-101
DESCRIPTION
The RA30H4552M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 450- to 520-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the nominal output signal (Pout=30W) attenuates up to 60 dB. The output power and the drain current increase as the gate voltage increases. The output power and the drain current increase substantially with the gate voltage around 0V(minimum).
The nominal output power becomes available at the state that VGG is 4V (typical) and 5V (maximum).
At VGG=5V, the typical gate currents are 1mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>30W, ηT>42% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 450-520MHz
*Metal shield structure that makes the improvements of spurious radiation simple
*Low-Power Control Current IGG=1mA (typ) @ VGG=5V
*Module Size: 67 x 18 x 9.9 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltages and controlling the output power with the input power.
RA30H4552M1-101
DESCRIPTION
The RA55H3340M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range.
The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V maximum). At VGG=5V, the typical gate current is 1 mA.
This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
*Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
*Pout>55W, ηT>35% @ VDD=12.5V, VGG=5V, Pin=50mW
*Broadband Frequency Range: 330-400MHz
*Low-Power Control Current IGG=1mA (typ) at VGG=5V
*Module Size: 66 x 21 x 9.88 mm
*Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RA55H3340M-101
DESCRIPTIONThe M62500 is a semiconductor integrated circuit designed and developed as a deflection control of the CRT display monitor.
The built-in trigger mode oscillator allows stable PWM control to be gained against a wide range of change of external signals.
The M62500 provides a low supply voltage output malfunction preventive circuit (UVLO) and software start function optimum to horizontal output correction of monitor, high voltage drive and high voltage regulator.
FEATURES*PWM output in synchronization with external signals
*Wide range of PWM control frequency
15kHz to 150kHz
*The PWM output phase is adjustable against external signals
*Soft start
*Built-in low voltage output malfunction prevention circuit
Start VCC>9V
Stop VCC<6V
APPLICATIONCRT display monitor
M62500FP
Description
Mitsubishi IGBT Modules are designed for use in switching applications.
Each module consists of two IGBTs in a half-bridge configuration with each transistor having a
reverse-connected super-fast recovery free-wheel diode.
All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.
Features
*Low Drive Power
*Low VCE(sat)
*Discrete Super-Fast Recovery Free-Wheel Diode
*High Frequency Operation
*Isolated Baseplate for Easy Heat Sinking
Applications
*AC Motor Control
*Motion/Servo Control
*UPS
*Welding Power Supplies
DESCRIPTION
The MGFC36V7177A is an internally impedance-matched GaAs power FET especially designed for use in 7.1 ~ 7.7 GHz band amplifiers.The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class A operation
Internally matched to 50(ohm) system
High output power
P1dB = 4W (TYP.) @ f=7.1~7.7GHz
High power gain
GLP = 9 dB (TYP.) @ f=7.1~7.7GHz
High power added efficiency
P.A.E. = 30 % (TYP.) @ f=7.1~7.7GHz
Low distortion [ item -51 ]
IM3= -45 dBc(TYP.) @Po=25dBm S.C.L.
APPLICATION
item 01 : 7.1~7.7 GHz band power amplifier
item 51 : 7.1~7.7 GHz band digital radio communication
QUALITY GRADE
IG
RECOMMENDED BIAS CONDITIONS
VDS = 10 (V)
ID = 1.2 (A) Refer to Bias Procedure
RG= 100 (ohm)
DESCRIPTION
The RA30H0608M is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 66- to 88-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 3V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA. This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.
FEATURES
• Enhancement-Mode MOSFET Transistors (IDD≅0 @ VDD=12.5V, VGG=0V)
• Pout>30W, ηT>40% @ VDD=12.5V, VGG=5V, Pin=50mW
• Broadband Frequency Range: 66-88MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 66 x 21 x 9.88 mm
• Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power
RoHS COMPLIANCE
• RA30H0608M-101 is a RoHS compliant products.
• RoHS compliance is indicate by the letter “G” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in electronic Ceramic parts.
How ever, it applicable to the following exceptions of RoHS Directions.
1.Lead in the Glass of a cathode-ray tube, electronic parts, and fluorescent tubes.
2.Lead in electronic Ceramic parts.
RA30H0608M-101
DESCRIPTION
RD07MVS2 is a MOS FET type transistor specifically designed for VHF/UHF RF po -wer amplifiers applications. This device have an interal monolithic zener diode from gate to source for ESD protection.
FEATURES
•High power gain: Pout>7W, Gp>10dB @Vdd=7.2V,f=520MHz
•High Efficiency: 60%typ. (175MHz)
•High Efficiency: 55%typ. (520MHz)
•Integrated gate protection diode
APPLICATION
For output stage of high power amplifiers In VHF/UHF band mobile radio sets.
RoHS COMPLIANT
RD07MVS2-101,T112 is a RoHS compliant products. RoHS compliance is indicate by the letter “G” after the Lot Marking. This product include the lead in high melting temperature type solders. How ever,it applicable to the following exceptions of RoHS Directions. 1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
