* Integrated Gain, Doubler and Driver Stages
* Single Positive Supply, +5V
* Integrated Bypassing Capacitor
* +20.0 dBm Output Saturated Power
* 35.0 dBc Fundamental Suppression
* On-Chip ESD Protection
* 100% RF, DC and Output Power Testing
* 3x3 QFN Package
* RoHS Compliant

General Description
Mimix Broadband’s 13.5-17.0 / 27.0-34.0 GHz GaAs MMIC doubler integrates a gain stage, passive doubler and driver amplifier onto a single device.
The XX1007-QT has a self-biased architecture requiring a single positive supply (+5V) only and integrated on-chip bypassing and DC blocking capacitors eliminating the need for any external
This device uses Mimix Broadband’s 0.15um GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
XX1007-QT has integrated ESD structures for protection and comes in a low cost 3x3mm QFN package.
The device is well suited for Millimeter wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

TAG Double

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* Sub-harmonic Transmitter
* Integrated IR Mixer, LO Buffer & Output Amplifier
* +20.0 dBm Output Third Order Intercept (OIP3)
* 2.0 dBm LO Drive Level
* 20.0 dB Image Rejection, 9.0 dB Conversion Gain
* 100% On-Wafer RF and DC Testing
* 100% Visual Inspection to MIL-STD-883 Method 2010

General Description
 Mimix Broadband’s 27.0-36.0 GHz GaAs MMIC transmitter has a +20.0 dBm output third order intercept and 20.0 dB image rejection across the band. This device is an image reject sub-harmonic anti-parallel diode mixer followed by a three stage output amplifier and includes an integrated LO buffer amplifier.
 The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process.
 This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.


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* Internal Pre-matching
* Single Supply operation
* Power Gain 8 dB
* ESD Protection on board
* Current Control for multiple applications
* 2.5% EVM @ 26.5 dBm avg power, 802.16 OFDM signal format, PAR = 9 dB
* Plastic Surface mount packaging
* Low Thermal Resistance
* Ideal for WiMAX applications
* Lead Free and RoHS compliant 6x6 QFN package

General Description
 The CHV2711 internally pre-matched power HBT device provides 8 dB of gain, 2.5% EVM at 26.5 dBm output power for 802.16 OFDM signal with a peak to average power ratio of 9 dB.
The device operates off a single supply voltage up to 12V and includes internal bias circuitry to enable exact setting of the quiescent current using an external Vcontrol.
 This Vcontrol is non-unique voltage setting and the same value can be used for each part depending on the required Icq. The device is ideal for high linearity, high data rate applications such as WiMAX. Internal pre-matching facilitates a simplified external matching approach and the highest in-band gain potential of the device. The device operates with unique matching at each of the popular WiMAX bands with the inherent repeatability of an InGaP HBT process.


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* Low Operating Voltage: 5V
* 34.0 dBm Output IP3 @ 850 MHz
* 3.8 dB Noise Figure @ 850 MHz
* 22.4 dB Gain @ 850 MHz
* 18.4 dBm P1dB @ 850 MHz
* Low Performance Variation Over Temperature
* 100% DC On-Wafer Testing
* ESD Protection on All Die: >1000V HBM
* Low Thermal Resistance: <85ºC/Watt

The CGB7016-BD is a Darlington Configured, high dynamic range, utility gain block amplifier. Designed for applications operating within the DC to 6.0 GHz frequency range, Mimix’s broadband, cascadable, gain block amplifiers are ideal solutions for transmit, receive and IF applications.
These MMIC amplifiers are available in bare die form. Mimix's InGaP HBT technology and an industry low thermal resistance offers a thermally robust and reliable gain block solution.
The InGaP HBT die have extra pads to enable thorough DC testing. This unique test capability and the inclusion of ESD protection on all die, significantly enhances the quality, reliability
and ruggedness of these products.
With a single bypass capacitor, optional RF choke and two DC blocking capacitors, this gain block amplifier offers significant ease of use in a broad range of applications.

* PA Driver Amp, IF Amp, LO Buffer Amp
* Cellular, PCS, GSM, UMTS
* Wireless Data and SATCOM
* Transmit and Receive Functions

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