General Description
Mimix Broadband’s 33.0-40.0 GHz GaAs MMIC transmitter has a small signal conversion gain of 8.0 dB with a 30.0 dB LO/RF isolation. The device has a pair of sub-harmonic mixers configured to form an image reject mixer which requires an LO at 15.5-21.5 GHz. This is followed by a two stage LNA. The image reject mixer reduces the need for unwanted sideband filtering before the power amplifier. The use of the sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer inputs are provided and an external 90 degree hybrid is required to select the desired sideband. This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Sub-Harmonic Transmitter
*Low DC Power Consumption
*Optional Power Bias
*8.0 dB Conversion Gain
*30 dB LO/RF Isolation
*100% On-Wafer RF and DC Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XU1001-BD-000V, XU1001-BD-000W, XU1001-BD-EV1

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General Description
Mimix Broadband’s 17.0-25.0 GHz GaAs packaged receiver has a noise figure of 2.5 dB and 20.0 dB image rejection across the band. This device is a two stage balanced LNA followed by an image reject sub-harmonic anti-parallel diode mixer and includes an integrated LO buffer amplifer. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. The use of a sub-harmonic mixer makes the provision of the LO easier than for fundamental mixers at these frequencies. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The device comes in a 7x7 mm QFN Surface Mount Laminate Package offering excellent RF and thermal properties and is RoHS compliant. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Sub-harmonic Receiver
*Integrated LNA, LO Buffer, Image Reject Mixer
*7x7 mm, QFN
*+2.0 dBm LO Drive Level
*2.5 dB Noise Figure
*20.0 dB Image Rejection
*100% On-Wafer RF, DC and Noise Figure Testing

XR1006-QD-0N00, XR1006-QD-0N0T, XR1006-QD-EV1
TAG GaAs, QFN, Receiver

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Description
Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF001-03, is now available in packaged form as the CFS0103-SB.
The CFS0103-SB is a high dynamic range, low noise, pHEMT packaged in a 4-lead SOT-343 surface mount plastic package. It is intended for many applications operating in the 0.1 GHz to 10 GHz frequency range.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low noise figure, high gain, medium power and good intercept is required. The CFS0103-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.

Features
*AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
*High Dynamic Range
*Low Current and Voltage
*Bias Point 3V and 40 mA
*0.4 dB Noise Figure at 2 GHz
*16 dBm P1dB at 2 GHz
*26 dBm OIP3 at 2 GHz
*300 m Gate Width
*Excellent Uniformity
*Low-Cost, Surface-Mount Package (SOT-343)
*RoHS Compliant Construction
*Low Thermal Resistance: 170ºC/W

Applications
*Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
*Cellular/PCS/GSM/W-CDMA
*Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
*Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
*General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

CFS0103-SB-0G00, CFS0103-SB-0G0T, PB-CFS0103-SB-00A0

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General Description
Mimix Broadband’s 4.5-10.5 GHz QFN packaged receiver has a noise figure of 1.8 dB and 13.0 dB conversion gain across the band. The device integrates an LNA, image reject mixer and LO buffer amplifier within a fully molded 4x4mm QFN package. The image reject mixer eliminates the need for a bandpass filter after the LNA to remove thermal noise at the image frequency. I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband. This device uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. This device is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*Integrated LNA, Mixer and LO Buffer Amplifier
*1.8 dB Noise Figure
*13.0 dB Conversion Gain
*4x4mm QFN Package
*100% RF, DC and NF Testing

XR1011-QH-0G00, XR1011-QH-0G0T, XR1011-QH-EV1
TAG GaAs, QFN, Receiver

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Description
Mimix's pHEMT technology is tested and proven in military, space and commercial applications. Mimix's proven workhorse, the CF003-03, has been fabricated in the Company's in-house foundry for over 19 years and is now available in packaged form as the CFS0303-SB.
The CFS0303-SB is a high dynamic range, lownoise, pHEMT packaged in a 4-lead SOT-343 surface-mount plastic package. It is intended for many applications operating in the 0.1GHz to 10GHz frequency range.
Mimix's high performance packaged pHEMTs are ideal for use in all applications where low-noise figure, high gain, medium power and good intercept is required. The CFS0303-SB is the perfect solution for the first or second stage of a base station LNA due to the excellent combination of low-noise figure and linearity. It is also well suited as a medium power driver stage in pole-top amplifiers and other transmit functions, particularly as the low thermal resistance allows extended power dissipation when voltage and current are adjusted for increased power and linearity.

Features
*AIGaAs/InGaAs/AIGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
*High Dynamic Range
*Low Current and Voltage
*Bias Point 3V and 60 mA
*0.3 dB Noise Figure at 2 GHz
*17 dBm P1dB at 2 GHz
*33 dBm OIP3 at 2 GHz
*600 m Gate Width: 50 Output Impedance
*Excellent Uniformity
*Low-Cost, Surface-Mount Package (SOT-343)
*Ro-HS Compliant Construction
*Low Thermal Resistance: 98ºC/W

Applications
*Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
*Cellular/PCS/GSM/W-CDMA
*Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
*Wimax, WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
*General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

CFS0303-SB-0G00, CFS0303-SB-0G0T

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General Description
Mimix Broadband’s three stage 8.5-11.0 GHz GaAs MMIC power amplifier has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC uses Mimix Broadband’s 0.5 m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for radar applications.

Features
*X-Band 10W Power Amplifier
*21.0 dB Large Signal Gain
*+40.0 dBm Saturated Output Power
*30% Power Added Efficiency
*On-chip Gate Bias Circuit
*100% On-Wafer RF, DC and Output Power Testing
*100% Visual Inspection to MIL-STD-883 Method 2010

XP1006-BD-000V, XP1006-BD-EV1

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General Description
The XP1035-BD is a linear power amplifier that operates over the 5.9-9.5GHz frequency band. The device provides 26 dB gain and 39 dBm Output Third Order Intercept Point (OIP3) across the band and is comprised of a three stage power amplifier with an integrated, temperature compensated on-chip power detector. The device includes on-chip ESD protection structures and DC by-pass capacitors to ease the implementation and volume assembly of the part. The
device is manufactured in 0.5um GaAs PHEMT device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1035-BD is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
*26 dB Small Signal Gain
*39 dBm Third Order Intercept Point (OIP3)
*Integrated Power Detector
*100% On-Wafer RF Testing

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General Description
Mimix Broadband’s four stage 35.0-43.0 GHz GaAs MMIC power amplifier has a small signal gain of 26.0dB with a +24.0 dBm saturated output power.
The device also includes Lange couplers to achieve good output return loss.
This MMIC uses Mimix Broadband’s 0.15 μm GaAs PHEMT device model technology, and is
based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Excellent Saturated Output Stage
* Balanced Design Provides Good Output Match
* 26.0 dB Small Signal Gain
* +24.0 dBm Saturated Output Power
* 100% On-Wafer RF, DC and Output Power Testing
* 100% Visual Inspection to MIL-STD-883 Method 2010

XP1005-BD-000V
XP1005-BD-EV1

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General Description
 Mimix Broadband’s 32.0-42.0 GHz GaAs MMIC sub-harmonic image reject mixer can be used as an upor down-converter.
The device has a conversion loss of 9.0 dB with 18.0 dB image rejection across the band.
I and Q mixer outputs are provided and an external 90 degree hybrid is required to select the desired sideband.
This MMIC uses Mimix Broadband’s 2 μm GaAs HBT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity.
The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This device is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.

Features
* Sub-harmonic Image Reject Mixer
* GaAs HBT Technology
* 9.0 dB Conversion Loss
* 18.0 dB Image Rejection
* 100% On-Wafer RF Testing
* 100% Visual Inspection to MIL-STD-883
* Method 2010

XM1003-BD-000V
XM1003-BD-EV1

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Features
* Matched Pair of Transistors for Optimum Balanced Amplifier Design
* AlGaAs/InGaAs/AlGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT)
* High Gain:
   25 dB @ 900 MHz
   21 dB @ 1900 MHz
* Low Noise Figure:
   0.6 dB @ 900 MHz
   0.7 dB @ 1900 MHz
* 17 dBm P1dB at 2 GHz
* 33 dBm OIP3 at 2 GHz
* 600μm Gate Width: 50 Output Impedance
* Excellent Uniformity
* Ultra Compact Surface-Mount QFN Package
* 10 Year MTBF Lifetime
* RoHS-Compliant Construction

Applications
* Low Noise Amplifiers and Oscillators Operating over the RF and Microwave Frequency Ranges
* Cellular/PCS/GSM/W-CDMA
* Mobile Handsets, Base Station Receivers and Tower-Mount Amplifiers
* WiMAX WLAN, LEO, GEO, WLL/RLL, GPS and MMDS Applications
* General Purpose Discrete pHEMT for Other Ultra Low-Noise and Medium Power Applications

Description
The CDQ0303-QS is a dual, ultra low-noise amplifier combining high gain, state-of-the-art noise figure and high IP3. Utilizing Mimix's distinctive in-house GaAs fabrication advantage and matched pair technology, co-located matched transistor die are assembled in the 4mm x 4mm
QFN package. The low-cost, surface-mount, 16 terminal, plastic package is also lead-free.
Packaging a matched pair of ultra low-noise devices in a single package makes the CDQ0303-QS an ideal product for balanced amplifier implementation. It is intended for many applications operating in the 900 MHz to 2400 MHz

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