Description
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17412.

Features
• 9A, 200V
• rDS(ON) = 0.400W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

IRF630 / RF1S630SM
TAG MOSFET

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Description
This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA17425.

Features
• 8A, 500V
• rDS(ON) = 0.850W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
TAG MOSFET

Trackback :: http://datasheetblog.com/trackback/55

댓글을 달아 주세요 Comment