This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 4.5A, 500V
• rDS(ON) = 1.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature


IRF830

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The EL5221 is a dual, low power, high voltage rail-to-rail input-output buffer. Operating on supplies ranging from 5V to 15V, while consuming only 500μA per channel, the EL5221 has a bandwidth of 12MHz -(-3dB). The EL5221 also provides rail-to-rail input and output ability, giving the maximum dynamic range at any supply voltage. The EL5221 also features fast slewing and settling times, as well as a high output drive capability of 30mA (sink and source). These features make the EL5221 ideal for use as voltage reference buffers in Thin Film Transistor Liquid Crystal Displays (TFT-LCD). Other applications include battery power, portable devices, and anywhere low power consumption is important. The EL5221 is available in space-saving 6-pin SOT-23 and 8-pin MSOP packages and operates over a temperature range of -40°C to +85°C.

Features
• 12MHz -3dB bandwidth
• Unity gain buffer
• Supply voltage = 4.5V to 16.5V
• Low supply current (per buffer) = 500μA
• High slew rate = 10V/μs
• Rail-to-rail operation
• Pb-Free plus anneal available (RoHS compliant)

Applications

• TFT-LCD drive circuits
• Electronics notebooks
• Electronics games
• Personal communication devices
• Personal Digital Assistants (PDA)
• Portable instrumentation
• Wireless LANs
• Office automation
• Active filters
• ADC/DAC buffer

EL5221CW-T7 EL5221CW-T7A EL5221CWZ-T7 EL5221CWZ-T7A EL5221CY EL5221CY-T7 EL5221CY-T13 EL5221CYZ EL5221CYZ-T7 EL5221CYZ-T13

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The CDP1020 is an ACPI compliant Device Bay Controller (DBC) that can control two device bays. The controller interfaces to the host system through the industry standard I2C or System Management Bus (SMBus) and is fully compliant with Device Bay Specification 0.90. The CDP1020 is designed to be compatible with the integrated SMBus host controller of the PiiX4/PiiX6 in Intel Architecture platforms. The CDP1020 is designed to be placed on the host motherboard, on a riser, or adjacent to the Device Bay connectors. The required clock source is generated from an internal oscillator on the CLK pin, with an external RC to set the frequency. This lowers the system cost and allows the CDP1020 to remain active during S3-S5 system states where all clock generators have been stopped. One of the key features of this device is the on-chip level shifters that provide slew rate controlled, direct gate drive for external N-Channel MOSFETs (Intersil HUF76113DK8 recommended) to switch the device bay VID supplies. Switching an N-Channel device as opposed to a P-Channel reduces both device cost and device count, resulting in an overall lower system cost. Configuration data for the CDP1020, including subsystem vendor ID, subsystem revision, bay size and device bay capabilities are designed to be written into the CDP1020 by the system BIOS at power up. The registers for this data are write-once-only and thus become read-only after the initial BIOS write. The address selection pins (AD1 and AD0) allow the CDP1020 to occupy any one of four I2C/SMBus addresses. This enables up to four CDP1020 devices to coexist in a system. The CDP1020 implements high current outputs for direct drive (with a limiting resistor) of the optional bay status LEDs. These indicators are two color (green/amber) common anode or anti-parallel LEDs that indicate the device bay status per the Device Bay Specification 0.90.

Features
• Fully Compliant with Device Bay Specification 0.90 and ACPI Specification 1.0
• Industry Standard SMBus/I2C Interface
• Controls for Two Device Bays
• Onboard Level Shifting for Direct Drive of N-Channel MOSFET VID Switches
• Integrated Pull-up Resistors on 1394PRx, USBPRx, SECUREx, and REMREQx Inputs
• RC Type Oscillator - Low Cost and Low Power Consumption
• Operational Voltage from 3.3 to 5.5V
• “5V Tolerant” Inputs at all Operating Voltages
• Write-Once BIOS/External Configuration
• Removal Request Input for Each Bay
• Security Lock Input for Each Bay
• High Current Device Bay LED Indicator Drivers With Separate High-Side Power Input
• Configurable Level/Pulse Bay Solenoid Drivers
• Programmable Insertion Time Out Delay
• HCMOS Technology; 28 Lead Plastic SOIC

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This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Features
• 20A, 500V
• rDS(ON) = 0.270W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount

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These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. They can be operated directly from integrated circuits.

Features
• 19A, 100V
• rDS(ON) = 0.200W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

RF1S9540SM

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The ICL8038 waveform generator is a monolithic integrated circuit capable of producing high accuracy sine, square, triangular, sawtooth and pulse waveforms with a minimum of external components. The frequency (or repetition rate) can be selected externally from 0.001Hz to more than 300kHz using either resistors or capacitors, and frequency modulation and sweeping can be accomplished with an external voltage. The ICL8038 is fabricated with advanced monolithic technology, using Schottky barrier diodes and thin film resistors, and the output is stable over a wide range of temperature and supply variations. These devices may be interfaced with phase locked loop circuitry to reduce temperature drift to less than 250ppm/oC.

Features
• Low Frequency Drift with Temperature. . . . . . .250ppm/oC
• Low Distortion. . . . . . . . . . . . . . . . 1% (Sine Wave Output)
• High Linearity . . . . . . . . . . . 0.1% (Triangle Wave Output)
• Wide Frequency Range . . . . . . . . . . . 0.001Hz to 300kHz
• Variable Duty Cycle . . . . . . . . . . . . . . . . . . . . . 2% to 98%
• High Level Outputs . . . . . . . . . . . . . . . . . . . . . . TTL to 28V
• Simultaneous Sine, Square, and Triangle Wave Outputs
• Easy to Use - Just a Handful of External Components Required

ICL8038CCPD ICL8038CCJD ICL8038BCJD ICL8038ACJD

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The CA1458, CA1558 (dual types); CA741C, CA741 (single types); high-gain operational amplifiers for use in military, industrial, and commercial applications. These monolithic silicon integrated circuit devices provide output short circuit protection and latch-free operation. These types also feature wide common mode and differential mode signal ranges and have low offset voltage nulling capability when used with an appropriately valued potentiometer. A 10kΩ potentiometer is used for offset nulling types CA741C, CA741 (see Figure 1). Types CA1458, CA1558 have no specific terminals for offset nulling. Each type consists of a differential input amplifier that effectively drives a gain and level shifting stage having a complementary emitter follower output. The manufacturing process make it possible to produce IC operational amplifiers with low burst “popcorn’’ noise characteristics. Technical Data on LM Branded types is identical to the corresponding CA Branded types.

Features
• Input Bias Current . . . . . . . . . . . . . . . . . . . . 500nA (Max)
• Input Offset Current . . . . . . . . . . . . . . . . . . . 200nA (Max)

Applications

• Comparator
• Multivibrator
• DC Amplifier
• Summing Amplifier
• Integrator or Differentiator
• Narrow Band or Band Pass Filter

CA0741CE CA1458E CA1558E CA0741T

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Features
• 80C48 and 80C80/85 Bus Compatible - No Interfacing Logic Required
• Conversion Time < 100µs
• Easy Interface to Most Microprocessors
• Will Operate in a “Stand Alone” Mode
• Differential Analog Voltage Inputs
• Works with Bandgap Voltage References
• TTL Compatible Inputs and Outputs
• On-Chip Clock Generator
• 0V to 5V Analog Voltage Input Range (Single + 5V Supply)
• No Zero-Adjust Required

Description
The ADC0802 family are CMOS 8-Bit, successive-approximation A/D converters which use a modified potentiometric ladder and are designed to operate with the 8080A control bus via three-state outputs. These converters appear to the processor as memory locations or I/O ports, and hence no interfacing logic is required. The differential analog voltage input has good commonmode- rejection and permits offsetting the analog zero-inputvoltage value. In addition, the voltage reference input can be adjusted to allow encoding any smaller analog voltage span
to the full 8 bits of resolution.

ADC0802LCN ADC0803LCN ADC0804LCN ADC0804LCWM
TAG Converter

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Features
• High-Voltage Types (20V Rating)
• CD40160BMS Decade with Asynchronous Clear
• CD40161BMS Binary with Asynchronous Clear
• CD40162BMS Decade with Synchronous Clear
• CD40163BMS Binary with Synchronous Clear
• Internal Look-Ahead for Fast Counting
• Carry Output for Cascading
• Synchronously Programmable
• Clear Asynchronous Input (CD40160BMS, CD40161BMS)
• Clear Synchronous Input (CD40162BMS, CD40163BMS)
• Synchronous Load Control Input
• Low Power TTL Compatibility
• Standardized Symmetrical Output Characteristics
• 100% Tested for Quiescent Current at 20V
• Maximum Input Current of 1µA at 18V Over Full Package
Temperature Range; 100nA at 18V and +25oC
• Noise Margin (Over Full Package Temperature Range):
- 1V at VDD = 5V
- 2V at VDD = 10V
- 2.5V at VDD = 15V
• 5V, 10V and 15V Parametric Ratings
• Meets All Requirements of JEDEC Tentative Standard No. 13B,
“Standard Specifications for Description of ‘B’ Series CMOS Devices”

Applications
• Programmable Binary and Decade Counting
• Counter Control/Timers
• Frequency Dividing

CD40161BMS CD40162BMS CD40163BMS
TAG CMOS

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DESCRIPTION
These devices combine four popular functions, Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory in one package. This combination lowers system cost, reduces board space requirements, and increases reliability.
Applying power to the device activates the power-on reset circuit which holds RESET/RESET active for a period of time. This allows the power supply and oscillator to stabilize before the processor can execute code.
The Watchdog Timer provides an independent protection mechanism for microcontrollers. When the microcontroller fails to restart a timer within a selectable time out interval, the device  activates the RESET/RESET signal. The user selects the interval from three preset values. Once selected, the interval does not change, even after cycling the power.
The device’s low VCC detection circuitry protects the user’s system from low voltage conditions, resetting the system when VCC falls below the minimum VCC trip point. RESET/RESET is asserted until VCC returns to proper operating level and stabilizes. Five industry standard VTRIP thresholds are available, however, Intersil’s unique circuits allow the threshold to be reprogrammed to meet custom requirements or to fine-tune the threshold for applications requiring higher precision.

FEATURES
• Selectable watchdog timer
• Low VCC detection and reset assertion
  — Five standard reset threshold voltages
  — Re-program low VCC reset threshold voltage using special programming sequence
  — Reset signal valid to VCC = 1V
• Determine watchdog or low voltage reset with a volatile flag bit
• Long battery life with low power consumption
  — <50µA max standby current, watchdog on
  — <1µA max standby current, watchdog off
  — <400µA max active current during read
• 32Kbits of EEPROM
• Built-in inadvertent write protection
  — Power-up/power-down protection circuitry
  — Protect 0, 1/4, 1/2 or all of EEPROM array with Block Lock™ protection
  — In circuit programmable ROM mode
• 2MHz SPI interface modes (0,0 & 1,1)
• Minimize EEPROM programming time
  — 32-byte page write mode
  — Self-timed write cycle
  — 5ms write cycle time (typical)
• 2.7V to 5.5V and 4.5V to 5.5V power supply operation
• Available packages
  — 14 Ld TSSOP, 8 Ld SOIC, 8 Ld PDIP
• Pb-free plus anneal available (RoHS compliant)

X5323, X5325, X25323, X25325, X5323P, X5325P, X5323V14, X5325V14, X5323S8, X5325S8,
X5323PI, X5325PI, X5323V14I, X5325V14I, X5323S8I, X5325S8I, X5323PZ, X5325PZ, X5323V14Z,
X5325V14Z, X5323S8Z, X5325S8Z, X5323PIZ, X5325PIZ, X5323V14IZ, X5325V14IZ, X5323S8IZ,
X5325S8IZ
TAG EEPROM

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