Description
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels.
Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.

Features
• Floating channel designed for bootstrap operation
 Fully operational to +500V or +600V
  Tolerant to negative transient voltage dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V logic compatible
 Separate logic supply range from 3.3V to 20V
 Logic and power ground ±5V offset
• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels
• Outputs in phase with inputs

IR2110, IR2110PbF, IR2110-1, IR2110-1PbF, IR2110-2, IR2110-2PbF, IR2113, IR2113PbF
IR2113-1, IR2113-1PbF, IR2113-2, IR2113-2PbF, IR2110S, IR2110SPbF, IR2113S, IR2113SPbF
TAG Driver

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Description
These are P-Channel enhancement mode silicon-gate power field-effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and as drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits

Features
• 11A, 200V
• rDS(ON) = 0.500W
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
  - TB334, “Guidelines for Soldering Surface Mount Components to PC Boards”

IRF9640, RF1S9640SM
TAG MOSFET

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Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF9Z34NL) is available for lowprofile applications.

Feature
- Advanced Process Technology
- Surface Mount (IRF9Z34NS)
- Low-profile through-hole (IRF9Z34NL)
- 175°C Operating Temperature
- Fast Switching
- P-Channel
- Fully Avalanche Rated

IRF9Z34NS, IRF9Z34NL
TAG MOSFET

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Description
The IR2101/IR21014/IR2102/IR21024 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an Nchannel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Features
· Floating channel designed for bootstrap operation
  Fully operational to +600V
  Tolerant to negative transient voltage dV/dt immune
· Gate drive supply range from 10 to 20V
· Undervoltage lockout
· 5V Schmitt-triggered input logic
· Matched propagation delay for both channels
· Outputs in phase with inputs (IR2101/IR21014) or out of phase with inputs (IR2102/IR21024)

IR2101 / IR21014 / IR2102 / IR21024
TAG Driver

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· Dynamic dv/dt Rating
· Repetitive Avalanche Rated
· Fast Switching
· Ease of Paralleling
· Simple Drive Requirements

Description
Third Generation HEXFETs from International Rectifier Provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

TAG MOSFET

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