Features
* Floating channel designed for bootstrap operation
- Fully operational to +400V
- Tolerant to negative transient voltage dV/dt immune
* Gate drive supply range from 12 to 18V
* Undervoltage lockout
* Current detection and limiting loop to limit driven power transistor current
* Error lead indicates fault conditions and pro grams shutdown time
* Output in phase with input

Description
 The IR2125Z is a high voltage, high speed power MOSFET and IGBT driver with over-current limiting protection circuitry. Proprietary GVIC and latch immune CMOS technologies enable ruggedized minilithic consturction. Logic inputs are compatible with standard CMOS or LSTTL outputs. the ouput driver features a high pulse current buffer stage designed for minimum driver
cross-conduction.
 The protection circuitry detects over-current in the driven power transistor and limits the gate drive voltage. Cycle by cycle shutdown is programmed by an external capacitor which directly controls the time interval between detection of the over-current limiting conditions and latched shutdown. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high or low side configuration which operates up to 400 volts.
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ㅁLogic-Level Gate Drive
ㅁUltra Low On-Resistance
ㅁSurface Mount (IRLR2705)
ㅁStraight Lead (IRLU2705)
ㅁAdvanced Process Technology
ㅁFast Switching
ㅁFully Avalanche Rated

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.

IRLU2705

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Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

ㅁ Advanced Process Technology
ㅁ Ultra Low On-Resistance
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ Fully Avalanche Rated

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ㅁ Advanced Process Technology
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ P-Channel
ㅁ Fully Avalanche Rated

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

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Features
• PFC, Ballast control and half-bridge driver in one IC
• Critical conduction mode boost type PFC
• No PFC current sense resistor required
• Programmable preheat frequency
• Programmable preheat time
• Programmable run frequency
• Programmable over-current protection
• Programmable end-of-life protection
• Programmable dead time
• Internal ignition ramp
• Internal fault counter
• DC bus under-voltage reset
• Shutdown pin with hysteresis
• Internal 15.6V zener clamp diode on Vcc
• Micropower startup (150μA)
• Latch immunity and ESD protection

Description
The IR2166 is a fully integrated, fully protected 600V ballast control IC designed to drive all types of fluorescent lamps. PFC circuitry operates in critical conduction mode and provides for high PF, low THD and DC Bus regulation. The IR2166 features include programmable preheat and run frequencies, programmable preheat time, programmable dead-time, programmable over-current protection, and programmable endof- life protection. Comprehensive protection features such as protection from failure of a lamp to strike, filament failures, end-of-life protection, DC bus undervoltage reset as well as an automatic restart function, have been included in the design. The IR2166 is available in both 16-lead PDIP and 16-lead (narrow body) SOIC packages.

IR2166S

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ㅁ Generation V Technology
ㅁ Ultra Low On-Resistance
ㅁ N-Channel Mosfet
ㅁ Surface Mount
ㅁ Available in Tape & Reel
ㅁ Dynamic dv/dt Rating
ㅁ Fast Switching

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application.
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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs
are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety applications.
The TO-220 package is universally preferred for commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ㅁ Advanced Process Technology
ㅁ Ultra Low On-Resistance
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ Fully Avalanche Rated
TAG MOSFET

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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ㅁ Advanced Process Technology
ㅁ Ultra Low On-Resistance
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ Fully Avalanche Rated
TAG MOSFET

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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

ㅁ Advanced Process Technology
ㅁ Ultra Low On-Resistance
ㅁ Dynamic dv/dt Rating
ㅁ 175°C Operating Temperature
ㅁ Fast Switching
ㅁ Fully Avalanche Rated
TAG MOSFET

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Description
Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features
- Advanced Process Technology
- Ultra Low On-Resistance
- Dynamic dv/dt Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
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