Features
* Integrated 600 V half-bridge gate driver
* CT, RT programmable oscillator
* 15.4 V Zener clamp on VCC
* Micropower startup
* Non-latched shutdown on CT pin (1/6th VCC)
* Internal bootstrap FET
* Excellent latch immunity on all inputs and outputs
* +/- 50 V/ns dV/dt immunity
* ESD protection on all pins
* 8-lead SOIC or PDIP package
* Internal deadtime

Description
The IRS2153(1)D is based on the popular IR2153 selfoscillating half-bridge gate driver IC using a more advanced silicon platform, and incorporates a high voltage half-bridge gate driver with a front end oscillator similar to the industry standard CMOS 555 timer. HVIC and latch immune CMOS technologies enable rugged monolithic construction. The output driver features a high
pulse current buffer stage designed for minimum driver cross-conduction. Noise immunity is achieved with low di/dt peak of the gate drivers.

IRS2153DPBF
IRS21531DPBF
IRS2153DSPBF

TAG Bridge, Driver, ic

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* Generation V Technology
* Ultra Low On-Resistance
* N-Channel MOSFET
* Surface Mount
* Available in Tape & Reel
* Dynamic dv/dt Rating
* Fast Switching
* Lead-Free

Description
Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that
HEXFET MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in a typical PCB mount application.



TAG MOSFET, Power

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Features
• UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching
• Generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations
• Industry-benchmark Super-247 package with higher power handling capability compared to same footprint TO-247
• Creepage distance increased to 5.35mm
• Lead-Free

Benefits
• Generation 4 IGBT's offer highest efficiencies available
• Maximum power density, twice the power handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require multiple, paralleled IGBTs
• HEXFREDTM antiparallel Diode minimizes switching losses and EMI

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Features
• Floating channel designed for bootstrap operation
• Fully operational to +600 V
• Tolerant to negative transient voltage, dV/dt immune
• Gate drive supply range from 10 V to 20 V
• Undervoltage lockout
• 3.3 V, 5 V, and 15 V logic input compatible
• Matched propagation delay for both channels
• Outputs in phase with inputs
• RoHS compliant

Description
The IRS2101 is a high voltage, high speed power MOSFET and IGBT driver with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the highside configuration which operates up to 600 V.

IRS2101SPBF

TAG Driver

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Features
• Dual Synchronous Controller with 180o Out of Phase Operation
• Configurable to 2-Independent Outputs or Current Shared Single Output
• Output Voltage Tracking
• Power up / down Sequencing
• Current Sharing Using Inductor’s DCR
• +/-1% Accurate Reference Voltage
• Programmable Switching Frequency up 600kHz
• Programmable Over Current Protection
• Hiccup Current Limit Using MOSFET Rds(on) sensing
• Latched Overvoltage Protection
• Dual Programmable Soft-Starts
• Programmable Enable Input
• Pre-Bias Start-up
• Dual Power Good Outputs
• On Board Regulator
• External Frequency Synchronization
• Thermal Protection
• 32-Lead MLPQ Package

Applications
• Embedded Telecom Systems
• Distributed Point of Load Power Architectures
• Computing Peripheral Voltage Regulators
• Graphics Cards
• General DC/DC Converters

Description
The IR3622 IC integrates a dual synchronous Buck controller, providing a high performance and
flexible solution. The IR3622 can be configured as 2-independent outputs or as current shared
single output. The current share configuration is ideal for high current applications.
The IR3622 enables output tracking and sequencing of multiple rails in either ratiometric or
simultaneous fashion. The IR3622 features 180o out of phase operation which reduces the
required input/output capacitance and results in lower number of capacitors. The switching
frequency is programmable from 200kHz to 600kHz per phase using one external resistor. In
addition, IR3622 also allows the switching frequency to be synchronized to an external clock
signal.
Other key features offered by this device include two independent programmable soft starts, two
independent power good outputs, precision enable input, and under voltage lockout function.
The current limit is provided by sensing the lower MOSFET's on-resistance for optimum cost and performance. The output voltages are monitored through dedicated pins to protect against open circuit, and enhance faster response to an overvoltage event.

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* Advanced Process Technology
* Dynamic dv/dt Rating
* 175°C Operating Temperature
* Fast Switching
* P-Channel
* Fully Avalanche Rated
* Lead-Free

Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TAG HEX, MOSFET, Power

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International Rectifier’s R6TM technology provides superior power MOSFETs for space applications.

These devices have improved immunity to Single Event Effect (SEE) and have been characterized for useful performance with Linear Energy Transfer (LET) up to 90MeV/(mg/cm2).

Their combination of very low RDS(on) and faster switching times reduces power loss and increases power density in today’s high speed switching applications such as DC-DC converters and motor controllers.

These devices retain all of the well established advantages of MOSFETs such as voltage
control, ease of paralleling and temperature stability of electrical parameters.


Features

*Low RDS(on)
*Fast Switching
*Single Event Effect (SEE) Hardened
*Low Total Gate Charge
*Simple Drive Requirements
*Ease of Paralleling
*Hermetically Sealed
*Ceramic Eyelets
*Electrically Isolated
*Light Weight

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 International Rectifier’s RADHard HEXFET® technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE).

 The combination of low Rds(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters.

Features:
* Single Event Effect (SEE) Hardened
* Low RDS(on)
* Low Total Gate Charge
* Proton Tolerant
* Simple Drive Requirements
* Ease of Paralleling
* Hermetically Sealed
* Surface Mount
* Ceramic Package
* Light Weight

IRHNA7Z60
IRHNA3Z60
IRHNA4Z60
IRHNA8Z60

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Features
* Trench Technology
* Ultra Low On-Resistance
* Dual P-Channel MOSFET
* Low Profile (<1.8mm)
* Available in Tape & Reel
* Lead-Free

Description
 New P-Channel HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically
reduced board space. The package is designed for vapor phase, infrared, or wave soldering techniques.


TAG MOSFET, Power

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DESCRIPTION
 The IR3084A Control IC combined with an IR XPhaseTM Phase IC provides a full featured and flexible way to implement a complete VR10 or VR11 power solution. The “Control” IC provides overall system control and interfaces with any number of “Phase” ICs which each drive and monitor a single phase of a multiphase converter.
 The XPhaseTM architecture results in a power supply that is smaller, less expensive, and easier to design while providing higher efficiency than conventional approaches.

FEATURES
· 1 to X phase operation with matching Phase IC
· Supports both VR11 8-bit VID code and extended VR10 7-bit VID code
· 0.5% Overall System Setpoint Accuracy
· VID Select pin sets the DAC to either VR10 or VR11
· VID Select pin selects either VR11 or legacy VR10 type startups
· Programmable VID offset and Load Line output impedance
· Programmable VID offset function at the Error Amp’s non-inverting input allowing zero offset
· Programmable Dynamic VID Slew Rate
· ±300mV Differential Remote Sense
· Programmable 150kHz to 1MHz oscillator
· Enable Input with 0.85V threshold and 100mV of hysteresis
· VR Ready output provides indication of proper operation and avoids false triggering
· Phase IC Gate Driver Bias Regulator / VRHOT Comparator
· Operates from 12V input with 9.9V Under-Voltage Lockout
· 6.9V/6mA Bias Regulator provides System Reference Voltage
· Programmable Hiccup Over-Current Protection with Delay to prevent false triggering
· Small thermally enhanced 5mm x 5mm, 28 pin MLPQ package

IR3084AMTRPBF
IR3084AMPBF
TAG Control, ic, XPHASE

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