Product Description
The Honeywell HRF-AT4511 is a 5-bit digital attenuator that is ideal for use in broadband communication system applications that require accuracy, speed and low power consumption. The HRF-AT4511 is manufactured with Honeywell's patented Silicon On Insulator (SOI) CMOS manufacturing technology, which provides the performance of GaAs with the economy and integration capabilities of conventional CMOS.

Features
*Very Low DC Power Consumption
*Attenuation In Steps From 0.5 dB To 15.5 dB
*Single Or Dual Power Supply Voltages
*Serial Data Interface
*50 Ohm Compatible Impedance
*Space Saving LPCCTM Surface Mount Packaging

HRF-AT4511-B, HRF-AT4511-TR, HRF-AT4511-E

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DESCRIPTION
Honeywell’s stainless steel 19C, 19U, and 19 Vacuum Gage Series sensors were developed for pressure applications that involve measurement of hostile media in harsh environments compatible with 316 stainless steel. The special Vacuum Gage Series sensors are specifically designed for applications that can be exposed to vacuum.
The 19C Series are calibrated and temperature compensated. They are available for use with either a constant voltage or current source. They feature a variety of pressure connections to allow use in a wide range of OEM (Original Equipment Manufacturer) equipment. The 19U Series is uncompensated for applications that use their own specialized circuit designs.
The 19C and 19U Series sensors are rugged and reliable transducers for use in a wide variety of pressure sensing applications where corrosive liquids or gases are monitored.

FEATURES
*Low cost
*Rugged, isolated stainless steel package
*Small size
*Reliable semiconductor technology
*Calibrated and temperature compensated
*Absolute and gage pressures
*Vacuum compatible, isolated sensors
*0 psi to 3 psi to, 0 psi to 500 psi
 
TYPICAL APPLICATIONS
*Industrial controls
*Process control systems
*Industrial automation and flow control
*Pressure calibrators

19C003PG1K, 19U003PG1K, 19C005PG1K, 19U005PG1K

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GENERAL DESCRIPTION
The 32K x 8 High Temperature Static RAM is a high performance 32,768 word x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s HTMOS™ technology, and is designed for use in systems operating in severe high temperature environments.
The RAM requires only a single 5 V ± 10% power supply and has CMOS compatible I/O. Power consumption is typically less than 30 mW/MHz in operation, and less than 10 mW when de-selected. The RAM read operation is fully asynchronous, with an associated typical access time of
50 ns at 5 V.
The RAM provides guaranteed performance over the full -55 to +225°C temperature range. Typically, parts will operate up to +300°C for a year, with derated performance. All parts are burned in at 250°C to eliminate infant mortality.

FEATURES
*Specified Over -55 to +225°C
*Fabricated with HTMOS™ IV Silicon on Insulator (SOI)
*Read/Write Cycle Times £ 50 ns Support 20 MHz Clock
*Asynchronous Operation
*CMOS Input/Output Buffers
*Single 5 V ± 10% Power Supply
*Hermetic 28-Lead Ceramic DIP

APPLICATONS
*Down-Hole Oil Well
*Avionics
*Turbine Engine Control
*Industrial Process Control
*Nuclear Reactor
*Electric Power Conversion
*Heavy Duty Internal Combustion Engines

HT6256DC, HT6256DB

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GENERAL DESCRIPTION
The HT83C51 is a monolithic 8-bit microcontroller that is pin equivalent to the Intel 8XC51FC microcontroller. Fabricated with Honeywell’s dielectrically isolated high-temperature (HTMOS™) process, it is designed specifically for severe high-temperature applications such as down-hole oil well, aerospace, turbine engine and industrial control.
The HT83C51 uses the standard MCS-51 instruction set which is optimized for control applications. Pin-for-pin equivalent to the MCS-51 series product, it is compatible with all known development environments. Key features include the programmable counter array, watch dog timer, enhanced serial port for multi-processor communication
and a hierarchical interrupt structure. Software selectable idle is included for reduced power. The HT83C51 varies from the standard 83C51FC, in that it supports half-duplex serial communication, and has 8K Bytes of Mask programmable ROM. The device is available in a standard pinout DIP, with optional packages considered.
These microcontrollers provide guaranteed performance supporting operating frequencies in excess of 16 MHz over the full -55 to +225°C temperature range. Typically, parts will operate up to +300°C for a year, with derated performance. All parts are burned in at 250°C to eliminate infant mortality.

FEATURES
*HTMOS Specified Over -55 to +225°C
*8-bit CPU Optimized For 5 Volt Control Applications
*Four 8-bit Bidirectional Parallel Ports
*Three 16-bit Timer/Counters with One Up/Down Timer/Counter and Clock Out
*Programmable Counter Array with:
-Capture/Compare
-Software Timer with Watchdog Capability
-High Speed Output
-Pulse Width Modulator
*Interrupt Structure with Seven Sources and Four Priority Levels
*Half Duplex Programmable Serial Port with:
-Framing Error Detection
-Automatic Address Recognition
*64K External Program Memory Address Space
*Hermetic 40-Pin Ceramic DIP
*64K External Data Memory Address Space
*256 Bytes Internal Data Memory
*8K Byte Mask ROM
*On-Chip Oscillator
*MCS-51Compatible Instruction Set

APPLICATIONS
*Down-Hole Oil Well
*Avionics
*Turbine Engine Control
*Industrial Process Control
*Nuclear Reactor
*Electric Power Conversion
*Heavy Duty Internal Combustion Engines

HT83C51DC, HT83C51DB

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DESCRIPTION
The Honeywell HMC5843 is a surface mount multi-chip module designed for low field magnetic sensing with a digital interface for applications such as low cost compassing and magnetometry. The HMC5843 includes our state of the art 1043 series magneto-resistive sensors plus Honeywell developed ASIC containing amplification, strap drivers, offset cancellation, 12-bit ADC and an I2C serial bus interface. The HMC5843 is in a 4.0 by 4.0 by 1.3mm surface mount leadless chip carrier (LCC). Applications for the HMC5843 include Consumer Electronics, Auto Navigation Systems, Personal Navigation Devices, and Magnetometers.
The HMC5843 utilizes Honeywell’s Anisotropic Magnetoresistive (AMR) technology that provides advantages over other magnetic sensor technologies. The sensors feature precision in-axis sensitivity and linearity, solid-state construction with very low cross-axis sensitivity designed to measure both direction and magnitude of Earth’s magnetic fields, from tens of micro-gauss to 6 gauss. Honeywell’s Magnetic Sensors are among the most sensitive and reliable low-field sensors in the industry.
Honeywell continues to maintain product excellence and performance by introducing innovative solid-state magnetic sensor solutions. These are highly reliable, top performance products that are delivered when promised. Honeywell’s magnetic sensor solutions provide real solutions you can count on.

FEATURES
*3-Axis Magnetoresistive Sensors and ASIC in a Single Package
*Low Cost
*4.0 x 4.0 x 1.3mm Low Height Profile LCC Surface Mount Package
*Low Voltage Operations (2.5 to 3.3V)
*Built-In Strap Drive Circuits
*I2C Digital Interface
*Lead Free Package Construction
*Wide Magnetic Field Range (+/-6 Oe)
*Available in Tape & Reel Packaging

HMC5843, HMC5843-TR, HMC5843-demo, HMC5843-eval

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Description
The CSN Series of closed loop current sensors are based on the principles of the Magnetoresistive or Hall effects, and the null balance or zero magnetic flux method (feedback system). The magnetic flux in the sensor core is constantly controlled at zero.
The amount of current required to balance zero flux is the measure of the primary current flowing through the conductor, multiplied by the ratio of the primary to secondary windings.
This closed loop current is the output from the device and presents an image of the primary current reduced by the number of secondary turns at any time. This current can be expressed as a voltage by passing it through a resistor.

Features
*Current sensing up to 1200 amps
*Measures ac, dc and impulse currents
*Competitive cost/performance ratio
*Rapid response
*High overload capability
*High level of electrical isolation between primary and secondary circuits
*Industrial operating temperature range
*Small size and weight

Typical Applications
*Variable speed drives
*Overcurrent protection
*Ground fault detectors
*Current feedback control systems
*Robotics
*UPS and telecommunication power supplies
*Welding power supplies
*Automotive - Battery management systems
*Wattmeters

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Description
The Gamewell-FCI Power Supply 9 (GFPS-9) panel provides two (2) Class A, Style Z, or four (4) Class B, Style Y notification appliance circuits. Each circuit is rated at 3 amperes, with a total capacity of 9 amperes per panel. These circuits may be programmed to activate by groups or various combinations by connection to one (1) or two (2) existing Class A or B notification appliance circuits with operating voltages ranging from 9 to 30 VDC. Either noncoded or coded operation is possible. In addition, the GFPS-9 can provide a temporal pattern output from a noncoded input.
A unique feature allows for programmable synchronizedoutputs for strobes by three (3) different major manufacturers, System Sensor, Faraday, or Gentex.
The GFPS-9 contains its own battery charger capable of maintaining batteries of up to 33 AH. The cabinet provides space for a set of 7 A/H batteries. It is supervised for ground fault, over-current, open circuits and low battery conditions. These conditions light the appropriate trouble
LED and automatically open the notification appliance circuit used for activation, transmitting a trouble signal to the main fire alarm control panel. The ground fault detection circuit may be disabled.
The unit contains a set of dry, Form “C” trouble actuated auxiliary contacts, rated 2.5 amp. @ 24 VDC (resistive). Transfer of these contacts for AC power failure is programmable and can be delayed for a period of six (6) hours. This delay feature may be disabled.
A power limited, non-resettable auxiliary power output up to three (3) amperes is also available. The panel can be programmed via DIP switch to disconnect this output from the
batteries 30 seconds after AC power failure, in order to avoid running down the batteries from current devices such as door holders, etc.

Features
*UL Listed as a fire alarm accessory for use with any Gamewell-FCI or other UL Listed fire alarm controls.
*Two (2) Class A (Style Z), or four (4) Class B (Style Y) notification appliance circuits.
*Programmable temporal pattern output including ANSI S3.41.
*High current 9 amp. total output.
*Integral strobe synchronization feature for strobes by three (3) manufacturers.
*Integral ground fault detection.
*Form “C” trouble contacts with delayed AC failure indication.

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GENERAL DESCRIPTION
The 32K x 8 Radiation Hardened Static RAM is a high performance 32,768 x 8-bit static random access memory with industry-standard functionality. It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments.
The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply.
The RAM is available with either TTL or CMOS compatible I/O. Power consumption is typically less than 50 mW/MHz in operation, and less than 5 mW/MHz in the low power disabled mode. The RAM read operation is fully asynchronous, with an associated typical access time of 20 ns.
Honeywell’s enhanced RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout, and process hardening techniques. The RICMOS™ IV process is a 5-volt, twin-well CMOS technology with a 170 Å gate oxide and a minimum drawn feature size of 0.8 μm (0.65 μm effective gate length—Leff). Additional features include a three layer interconnect metalization and a lightly doped drain (LDD) structure for improved short channel reliability. High resistivity cross-coupled polysilicon resistors have been incorporated for single event upset hardening.

FEATURES
RADIATION
*Fabricated with RICMOS™ IV Bulk 0.8 μm Process (Leff = 0.65 μm)
*Total Dose Hardness through 1x106 rad(SiO2)
*Neutron Hardness through 1x1014 cm-2
*Dynamic and Static Transient Upset Hardness through 1x109 rad(Si)/s
*Soft Error Rate of <1x10-10 upsets/bit-day
*Dose Rate Survivability through 1x1012 rad(Si)/s
*Latchup Free
OTHER
*Listed on SMD #5962-92153. Available as MIL-PRF-38535 QML Class Q and Class V
*Read/Write Cycle Times ≤ 30 ns (Typical), ≤ 40 ns (-55 to 125°C)
*Standby Current of 20 μA (typical)
*Asynchronous Operation
*CMOS or TTL Compatible I/O
*Single 5 V ± 10% Power Supply
*Packaging Options
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)
- 28-Lead Flat Pack (0.530 in. x 0.720 in.)
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28

HC6856WVRZC35, HC6856WVRZC40, HC6856WVRZC60
TAG RAM

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GENERAL DESCRIPTION
The 128K x 8 Radiation Hardened Static RAM is a high performance 131,072 word x 8-bit static random access memory with industry-standard functionality.
It is fabricated with Honeywell’s radiation hardened technology, and is designed for use in systems operating in radiation environments.
The RAM operates over the full military temperature range and requires only a single 5 V ± 10% power supply.
The RAM is wire bond programmable for either TTL or CMOS compatible I/O.
Power consumption is typically less than 25 mW/MHz in operation, and less than 5 mW in the low power disabled mode.
The RAM read operation is fully asynchronous, with an associated typical access time of 15 ns at 5V.
Honeywell’s enhancedSOI RICMOS™IV (Radiation Insensitive CMOS) technology is radiation hardened through the use of advanced and proprietary design, layout and process hardening techniques.
The RICMOS™ IV process is an advanced 5-volt, SIMOX CMOS technology with a 150 Å
gate oxide and a minimum feature size of 0.7 μm (0.55 μm effective gate length—Leff).
Additional features include Honeywell’s proprietary SHARP planarization process, and a lightly doped drain (LDD) structure for improved short channel reliability.
A 7 transistor (7T) memory cell is used for superior single event upset hardening, while three layer metal power bussing and the low collection volume SIMOX substrate provide improved dose rate hardening.

FEATURES
*RADIATION
-Fabricated with RICMOS™ IV Silicon on Insulator (SOI) 0.7 μm Process (Leff = 0.55 μm)
-Total Dose Hardness through 1x106 rad(SiO2)
-Neutron Hardness through 1x1014 cm-2
-Dynamic and Static Transient Upset Hardness through 1x1011 rad (Si)/s
-Dose Rate Survivability through <1x1012 rad(Si)/s
-Soft Error Rate of <1x10-10 upsets/bit-day in Geosynchronous Orbit
-No Latchup
*OTHER
-Read/Write Cycle Times
 ≤ 16 ns (Typical)
 ≤ 25 ns (-55 to 125°C)
-Typical Operating Power <25 mW/MHz
-Asynchronous Operation
-CMOS or TTL Compatible I/O
-Single 5 V ± 10% Power Supply
-Packaging Options
 32-Lead Flat Pack (0.820 in. x 0.600 in.)
 40-Lead Flat Pack (0.775 in. x 0.710 in.)

HX6228AVRC
HX6228KQFT
TAG RAM

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Description
V5 and V7 Series Basic Switches are used for simple or precision on/off, end of limit, presence/absence, pressure, temperature and manual operator interface application needs.

Features
* World-wide package size acceptance
* Current rating ranges from 0.1 A to 25 A
* Wiping contact action
* Temperature range to 177 °C [350 °F]
* Long mechanical life
* Elongated mounting holes for easier, more accurate mounting
* UL/CSA recognized, ENEC (European) approval available
* Choice of actuation, termination and operating characteristics

Applications
* Appliances
* Vending machines
* Timing devices
* Office equipment
* Computer/business equipment
* Test instruments
* Medical/dental equipment
* Communications equipment
* HVAC equipment
* Manually operated devices
* Valves
* Gaming equipment
* Pressure switches

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