Description
The AFM04P3-212, 213 are high performance power GaAs MESFET chips having a gate length of 0.25 mm and a total gate periphery of 400 mm. These devices have excellent gain and power performance through 26 GHz, making them suitable for a wide range of commercial and military applications in oscillator and amplifier circuits.They also have excellent noise performance and can be used in the first and second stage of low noise amplifier design. The AFM04P3 employs Ti/Pd/Au gate metallization and surface passivation to ensure a rugged, reliable part.

Features
*Low Noise Figure, 0.6 dB @ 4 GHz
*20 dBm Output Power @ 18 GHz
*High Associated Gain, 13 dB @ 4 GHz
*High Power Added Efficiency, 25%
*Broadband Operation, DC–26 GHz
*Available in Tape and Reel Packaging

AFM04P3-213

Description
The AFP02N8-212, 213 are general purpose packaged PHEMT chips that have excellent gain and noise performance through X band, making them suitable for a wide range of commercial applications. The devices employ 0.7 mm Ti/Pd/Au gates and surface passivation to ensure a rugged, reliable part. Available in metal ceramic packages with a choice of two lead lengths. The
components are also available in tape and reel and are ready for automatic insertion equipment.

Features
*Low Noise Figure, 1.55 dB @ 4 GHz
*High Associated Gain, 13 dB @ 4 GHz
*High MAG, > 15 dB @ 4 GHz
*0.7 mm Ti/Pd/Au Gates
*Passivated Surface
*Low Cost Metal Ceramic Package
*Available with Two Lead Lengths
*Available in Tape and Reel Packaging

AFP02N8-213

Description
The AV132-315 is a voltage controlled variable attenuator from Alpha’s series of HIP3™ components. It is specifically designed and specified for use as a wide dynamic range low distortion attenuator for DCS and PCS base station applications centered at 1837.5 MHz and 1960 MHz. The AV132-315 employs a monolithic quadrature hybrid and a pair of silicon PIN diodes to achieve the specified low distortion performance. It operates from 0–12 V with 1.6 mA typical control current at maximum attenuation. The AV132-315 is packaged in a small outline LGA (Land Grid Array) surface mount package with the internal elements affixed to an organic BT substrate.

Features
*23 dB Attenuation Range
*1.5 dB Insertion Loss, 1.5 SWR
*0–12 V Control Voltage
*43 dBm IP3
*Small Footprint LGA Package
*Designed for DCS/PCS Base Station Applications

Description
The AM028S2-A2 is a broadband millimeterwave mixer in a rugged surface mount package that is compatible with high volume solder installation. The single balanced up converter mixer is designed for use in millimeterwave communication and sensor systems as a frequency conversion stage in the transmit chain when wide dynamic range and high linearity are required. The robust ceramic surface mount package provides excellent electrical performance and a high degree of environmental protection for long-term reliability. All mixers are screened at the operating frequencies prior to shipment for guaranteed performance. Mixer is targeted for high volume millimeterwave applications such as point-to-point and point-to-multipoint wireless communications systems.

Features
*Surface Mount Package
*Low Conversion Loss, 7 dB
*Low LO Power Requirement, 8 dBm
*Wide IF Bandwidth, 0–6 GHz
*No DC Bias Required
*100% RF Testing for Conversion Loss

Description
The AP640R5-A3 is a broadband millimeterwave singlepole double-throw (SPDT) switch in a rugged surface mount package which is compatible with high-volume solder installation. Based on PIN diode MMIC technology, the switch is designed for use in millimeterwave communication and sensor systems when low loss and high linearity are required. Typical applications are transmit/receive function for TDD systems or switching between signal paths. The robust ceramic surface mount package provides excellent electrical performance and a high degree of environmental protection for long-term reliability. All switches are screened at the operating frequencies prior to shipment for guaranteed performance. Switch is targeted for high-volume broadband applications such as satellite and fixed wireless systems.

Features
*Surface Mount Package
*Low Loss, 1.3 dB
*High Isolation, 33 dB
*High Power Handling, +33 dBm CW
*Fast Switching Speed, 2 nS
*100% RF and DC Testing

Description
The AV850M2-A2 is a broadband millimeterwave voltage variable attenuator in a rugged surface mount package that is compatible with high-volume solder installation.The attenuator is designed for use in millimeterwave communication and sensor systems as a variable attenuation stage in the receiver or transmitter chain when wide dynamic range and high linearity are required. The robust ceramic surface mount package provides excellent electrical performance and a high degree of environmental protection for long-term reliability. All attenuators are screened at the operating frequencies prior to shipment for guaranteed performance. Attenuator is targeted for high-volume millimeterwave applications such as point-to-point and point-to-multipoint wireless communications systems. Control voltage VC2 sets the attenuation level while VC1 adjusts return loss for the part.

Features
*Surface Mount Package
*30 dB Attenuation Range
*+10 dBm P1 dB All Attenuation States
*Low Insertion Loss
*100% RF and DC Testing

Description
Alpha’s product line of silicon Schottky diode chips are intended for use as detector and mixer devices in hybrid integrated circuits at frequencies from below 100 MHz to higher than 40 GHz. Alpha’s “Universal Chip” design features a 4 mil diameter bond pad that is offset from the semiconductor junction preventing damage to the active junction as a result of wire bonding.
As power-sensing detectors, these Schottky diode chips all have the same voltage sensitivity so long as the output video impedance is much higher than the video resistance of the diode. Figure 1 shows the expected detected voltage sensitivity as a function of RF source impedance in an untuned circuit. Note that sensitivity is substantially increased by transforming the source
impedance from 50 Ω to higher values. Maximum sensitivity occurs when the source impedance equals the video resistance.
In a detector circuit operating at zero bias, depending on the video load impedance, a ZBD device with RV less than 10 kΩ may be more sensitive than a low barrier diode with RV greater than 100 kΩ. Applying forward bias reduces the diode video resistance as shown in Figure 2. Lower video resistance also increases the video bandwidth but does not increase voltage sensitivity, as shown in Figure 3. Biased Schottky diodes have better temperature stability and also may be used in temperature compensated detector circuits.
P-type Schottky diodes generate lower 1/F noise and are preferred for Doppler mixers and biased detector applications. The bond pad for the P-type Schottky diode is the cathode. N-type Schottky diodes have lower parasitic resistance, RS, and will perform with lower conversion loss in mixer circuits. The bond pad for the N-type Schottky diode is the anode.

Features
*For Detector and Mixer Applications
*Low Capacitance for Usage Beyond 40 GHz
*ZBD and Low Barrier Designs
*P-Type and N-Type Junctions
*Large Bond Pad Chip Design

CDC7631-000, CDB7619-000, CDB7620-000, CDF7621-000, CDF7623-000

Description
The AD310-25 is an IC FET digital attenuator consisting of four monolithic attenuators consisting of four monolithic attenuators with LSB of 1 dB and a total attenuation of 15dB with all attenuators connected.
This unit is a pin for pin replacement for the AT002D8-25 with improved RF performance extended to 2GHz.
The AD310-25 is particularly suited where high attenuation accuracy, low insertion loss and low intermodulation products are required. Typical applications include cellular radio, wireless data, wireless local loop and other gain level control circuits.

Features
*Attenuation in 1 dB steps to 15 dB with High Accuracy
*Designed for Cellular Radio Applications
*Low Cost SOIC-16 Plastic Package
*Low DC Power Consumption

General Description
The AO3400A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO3400A is Pb-free (meets ROHS & Sony 259 specifications).

Features
*VDS (V) = 30V
*ID = 5.7A (VGS = 10V)
*RDS(ON) < 26.5mΩ (VGS = 10V)
*RDS(ON) < 32mΩ (VGS = 4.5V)
*RDS(ON) < 48mΩ (VGS = 2.5V)

Description
The AV133-315 is a voltage controlled variable attenuator from Alpha’s series of HIP3™ components.
It is specifically designed and specified for use as a wide dynamic range low distortion attenuator for UMTS base station applications centered at 2140 MHz.
The AV133- 315 employs a monolithic quadrature hybrid and a pair of silicon PIN diodes to achieve the specified low distortion performance.
It operates from 0–12 V at 1.6 mA typical control current at maximum attenuation.
The AV133-315 is packaged in a small outline LGA (Land Grid Array) surface mount package with the internal elements affixed to an organic BT substrate.

Features
*23 dB Attenuation Range
*1.5 dB Insertion Loss, 1.5 SWR
*0–12 V Control Voltage
*43 dBm IP3
*Small Footprint LGA Package
*Designed for UMTS Base StationsFeatures