GENERAL DESCRIPTION
The ALD2302A/ALD2302 are monolithic precision high performance dual voltage comparators built with advanced silicon gate CMOS technology.
The primary features are: very high typical input impedance of 1012W; low input bias current of 10pA; fast response time of 180ns; very low power dissipation of 175mA per comparator; and single (+5V) or dual (±5V) power supply operation.
The input voltage range includes ground, which makes these comparators ideal for single supply low level signal detection with high source impedance.
The outputs can source and sink current allowing for application flexibility.
They can be used in either wired-OR connection without pull-up resistor or push-pull configuration.
The ALD2302A/ALD2302 can also be used in wired-OR connection with other open
drain circuits such as the ALD2301/ALD2303 voltage comparators.
The ALD2302A/ALD2302 voltage comparators are ideal for a great variety of applications, especially in low level signal detection circuits which require low standby power and high output current.
For quad packages, use the ALD4302 quad voltage comparator.

FEATURES
* Guaranteed to drive 200W loads
* Fanout of 30LS TTL loads
* Low supply current of 175mA each comparator
* Pinout of LM193 type industry standard comparators
* Extremely low input bias currents -- 10pA
* Virtually eliminates source impedance effects
* Low operating supply voltage of 4V to 12V
* Single (+5V) and dual supply (±5V) operation
* High speed for both large and small signals -- 180ns for TTL inputs and 400ns for 20mV overdrive
* CMOS, NMOS and TTL compatible
* Push-pull outputs-current sourcing/ sinking
* High output sinking current -- 60mA
* Low supply current spikes

APPLICATIONS
* PCMCIA instruments
* MOSFET driver
* High source impedance voltage comparison circuits
* Multiple limit window comparator
* Power supply voltage monitor
* Photodetector sensor circuit
* High speed LED driver
* Oscillators
* Battery operated instruments
* Remote signal detection
* Multiple relay drivers

ALD2302
ALD2302ADA
ALD2302DA

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GENERAL DESCRIPTION
 ALD110802/ALD110902 are monolithic quad/dual N-Channel MOSFETS matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
The ALD110802/ALD110902 MOSFETS are designed and built for exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
They are versatile circuit elements useful as design components for a broad range of analog applications, such as basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system and V+ pin to the most positive voltage potential (or left open unused).
All other pins must have voltages within these voltage limits.
The ALD110802/ALD110902 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in <+0.1V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired, as these devices exhibit well controlled turn-off and sub-threshold characteristics and can be biased and operated in the sub-threshold region.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD110802/ALD110902 are suitable for use in very low operating voltage or very low power (nanowatt), precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
* Enhancement-mode (normally off)
* Precision Gate Threshold Voltage of +0.2V
* Matched MOSFET to MOSFET characteristics
* Tight lot to lot parametric control
* Low input capacitance
* VGS(th) match (VOS) to 10mV
* High input impedance — 1012Ω typical
* Positive, zero, and negative VGS(th) temperature coefficient
* DC current gain >108
* Low input and output leakage currents

APPLICATIONS
* Ultra low power (nanowatt) analog and digital circuits
* Ultra low operating voltage(<0.2V) circuits
* Sub-threshold biased and operated circuits
* Precision current mirrors and current sources
* Nano-Amp current sources
* High impedance resistor simulators
* Capacitive probes and sensor interfaces
* Differential amplifier input stages
* Discrete Voltage comparators and level shifters
* Voltage bias circuits
* Sample and Hold circuits
* Analog and digital inverters
* Charge detectors and charge integrators
* Source followers and High Impedance buffers
* Current multipliers
* Discrete Analog switches / multiplexers

ALD110902
ALD110802PC
ALD110802SC
ALD110902PA
ALD110902SA

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GENERAL DESCRIPTION
ALD111933 are monolithic dual N-Channel MOSFETs matched at the factory using ALD’s proven EPAD® CMOS technology.
These devices are intended for low voltage, small signal applications.
ALD111933 MOSFETs are designed and built with exceptional device electrical characteristics matching.
Since these devices are on the same monolithic chip, they also exhibit excellent tempco tracking characteristics.
Each device is versatile as a circuit element and is a useful design component for a broad range of analog applications.
They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications.
For most applications, connect V- and N/C pins to the most negative voltage potential in the system.
All other pins must have voltages within these voltage limits.
The ALD111933 devices are built for minimum offset voltage and differential thermal response, and they are designed for switching and amplifying applications in +3.0V to +10V systems where low input bias current, low input capacitance and fast switching speed are desired.
Since these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment.
The ALD111933 are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources.
The high input impedance and the high DC current gain of the Field Effect Transistors result in extremely low current loss through the control gate.
The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature.
For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25°C is = 3mA/30pA = 100,000,000.

FEATURES
• Enhancement-mode (normally off)
• Standard Gate Threshold Voltages: +3.3V
• Matched MOSFET to MOSFET characteristics
• Tight lot to lot parametric control
• Parallel connection of MOSFETs to increase drain currents
• Low input capacitance
• VGS(th) match to 20mV
• High input impedance — 1012Ω typical
• Positive, zero, and negative VGS(th) temperature coefficient
• DC current gain >108
• Low input and output leakage currents

APPLICATIONS
• Precision current mirrors
• Precision current sources
• Voltage choppers
• Differential amplifier input stages
• Discrete voltage comparators
• Voltage bias circuits
• Sample and Hold circuits
• Analog inverters
• Level shifters
• Source followers and buffers
• Current multipliers
• Discrete analog multiplexers/matrices
• Discrete analog switches
• Low current voltage clamps
• Voltage detectors
• Capacitive probes
• Sensor interfaces
• Peak detectors
• Level shifters
• Multiple preset voltage hysteresis circuits (with other VGS(th) EPAD MOSFETS)
• Energy harvesting circuits
• Zero standby power voltage monitors

ALD111933PAL
ALD111933MAL
ALD111933SAL

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