General Description
The VDS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 words x 16 bits x 4
banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system
applications

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*4096 refresh cycle
*DQM for masking
*Package:54-pins 400 mil TSOP-Type II

VDS7616A4A-55, VDS7616A4A-6, VDS7616A4A-7

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General Description
The VDS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 words x 8 bits x 4 banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*4096 refresh cycle
*DQM for masking
*Package:54-pins 400 mil TSOP-Type II

VDS7608A4A-5, VDS7608A4A-55, VDS7608A4A-6, VDS7608A4A-7, VDS7608A4A-7.5

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General Description
The ADS6632A4A are four-bank Synchronous DRAMs organized as 524,288 words x 32 bits x 4 banks,
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,3,8,& full page)
-Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*4096 refresh cycle
*DQM for masking
*Package:86-pins 400 mil TSOP-Type II

ADS6632A4A-5, ADS6632A4A-5.5, ADS6632A4A-6

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General Description
The VDS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features
*Single 3.3V +/- 0.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8, & full page)
-Burst Type (sequential & Interleave)
*2 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*4096 refresh cycle
*DQM for masking
*Package:50-pins 400 mil TSOP-Type II

VDS4616A4A-5
VDS4616A4A -6
VDS4616A4A -7
TAG DRAM

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General Description
The ADS8616A8A are four-bank Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,4,8,& full page)
- Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*DQM for masking
*8192 Refresh Cycles
*Package:54-pins 400 mil TSOP-Type II

ADS8616A8A-75, ADS8616A8A-75A
TAG DRAM

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General Description
The ADS8608A8A are four-bank Synchronous DRAMs organized as 8,388,608 words x 8 bits x 4 banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.

Features
*JEDEC standard LVTTL 3.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
*4 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*DQM for masking
*8192 Refresh Cycles
*Package:54-pins 400 mil TSOP-Type II

ADS8608A8A-75, ADS8608A8A-75A

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General Description
The ADS4616A4A are two-bank Synchronous DRAMs organized as 524,288 words x 16 bits x 2 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features
*Single 3.3V +/- 0.3V power supply
*MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8, & full page)
-Burst Type (sequential & Interleave)
*2 banks operation
*All inputs are sampled at the positive edge of the system clock
*Burst Read single write operation
*Auto & Self refresh
*4096 refresh cycle
*DQM for masking
*Package:50-pins 400 mil TSOP-Type II

ADS4616A4A-5
ADS4616A4A -6
ADS4616A4A -7
TAG DRAM

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General Description
The ADS7608A4A are four-bank Synchronous DRAMs organized as 4,194,304 words x 8 bits x 4 banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications.

Features
* JEDEC standard LVTTL 3.3V power supply
* MRS Cycle with address key programs
- CAS Latency (2 & 3)
- Burst Length (1,2,3,8,& full page)
- Burst Type (sequential & Interleave)
* 4 banks operation
* All inputs are sampled at the positive edge of the system clock
* Burst Read single write operation
* Auto & Self refresh
* 4096 refresh cycle
* DQM for masking
* Package:54-pins 400 mil TSOP-Type II

ADS7608A4A-5
ADS7608A4A-55
ADS7608A4A-6
ADS7608A4A-7
ADS7608A4A-7.5
TAG DRAM

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General Description
 The ADD8616A8A are four- bank Double Data Rate(DDR) Synchronous DRAMs organized as 4,194,304 words x 16 bits x 4 banks, Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Data outputs occur at both rising edges of CK and /CK.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system applications

Features
* 2.5V for VDDQ power supply
* SSTL_2 interface
* MRS Cycle with address key programs
- CAS Latency (2, 2.5)
- Burst Length (2,4 &8)
- Burst Type (sequential & Interleave)
* 4 banks operation
* Differential clock input (CK, /CK) operation
* Double data rate interface
* Auto & Self refresh
* 8192 refresh cycle
* DQM for masking
* Package:66- pins 400 mil TSOP- Type II

VDD8608A8A- 75BA
ADD8616A8A- 75B

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General Description
The ADS7616A4A are four-bank Synchronous DRAMs organized as 2,097152 words x 16 bits x 4
banks.
Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.
Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth high performance memory system
applications

Features
•JEDEC standard LVTTL 3.3V power supply
•MRS Cycle with address key programs
-CAS Latency (2 & 3)
-Burst Length (1,2,4,8,& full page)
-Burst Type (sequential & Interleave)
•4 banks operation
•All inputs are sampled at the positive edge of the system clock
•Burst Read single write operation
•Auto & Self refresh
•4096 refresh cycle
•DQM for masking
•Package:54-pins 400 mil TSOP-Type II

ADS7616A4A-55
ADS7616A4A-6
ADS7616A4A-7

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