The AGR09180EF is a high-voltage, gold-metalized, laterally diffused metal oxide semiconductor (LDMOS) RF power transistor suitable for cellular band, code-division multiple access (CDMA), global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and time-division multiple access (TDMA) single and multicarrier class
AB wireless base station amplifier applications.
This device is manufactured on an advanced LDMOS technology, offering state-of-the-art performance, reliability, and thermal resistance.
Packaged in an industry-standard CuW package capable of delivering a minimum output power of 180 W, it is ideally suited for today's RF power amplifier applications.

* Typical performance ratings are for IS-95 CDMA,
* pilot, sync, paging, traffic codes 8—13:
- Output power (POUT): 38 W.
- Power gain: 18.25 dB.
- Efficiency: 27%.
- Adjacent channel power ratio (ACPR) for 30 kHz bandwidth (BW):
  (750 kHz offset: –45 dBc)
  (1.98 MHz offset: –60 dBc)
- Input return loss: 10 dB.
* High-reliability, gold-metalization process.
* High gain, efficiency, and linearity.
* Integrated ESD protection.
* Industry-standard packages.
* 180 W minimum output power.

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